The influence of concentration-dependent diffusivity on the growth kinetics of individual ledges during solid–solid phase transformations

The problem of step motion during lateral growth in solid-solid phase transformations is re-examined. Results are obtained for the steady motion of an individual ledge when volume diffusion in the parent phase is the predominant contribution to the growth rate. A comparison is made between our results and the earlier work of Jones & Trivedi (1971). There are significant differences between the two sets of results particularly in the limit of small perturbations to the Laplacian diffusion field. To confirm the accuracy of the results presented here the calculations have been made by two different methods.

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Mesoscale simulations of the kinetics of solid–solid phase transformations: Selecting the relevant interfacial compositions for shape-preserved growth

Comptes Rendus Physique ◽

10.1016/j.crhy.2010.07.006 ◽

2010 ◽

Vol 11 (3-4) ◽

pp. 257-264 ◽

Cited By ~ 1

Author(s):

Christopher R. Hutchinson ◽

Hatem S. Zurob

Keyword(s):

Phase Transformations ◽

Solid Phase ◽

Kinetics Of ◽

Mesoscale Simulations

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Growth kinetics of iron silicides fabricated by solid phase epitaxy or ion beam synthesis

Thin Solid Films ◽

10.1016/0040-6090(92)90704-f ◽

1992 ◽

Vol 215 (1) ◽

pp. 76-83 ◽

Cited By ~ 17

Author(s):

K. Radermacher ◽

S. Mantl ◽

Ch. Dieker ◽

H. Lüth ◽

C. Freiburg

Keyword(s):

Growth Kinetics ◽

Solid Phase ◽

Ion Beam ◽

Solid Phase Epitaxy ◽

Iron Silicides ◽

Ion Beam Synthesis ◽

Kinetics Of

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The growth kinetics of ledges during phase transformations: multistep interactions

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1982.0150 ◽

1982 ◽

Vol 384 (1786) ◽

pp. 107-133 ◽

Cited By ~ 32

Keyword(s):

Steady State ◽

Phase Transformations ◽

Growth Kinetics ◽

Volume Diffusion ◽

Asymptotic Methods ◽

Parent Phase ◽

Growth Characteristics ◽

Controlling Factor ◽

Kinetics Of ◽

Equal Height

An analysis of the growth characteristics of a train of ledges is presented, where volume diffusion in the parent phase is assumed to be the rate- controlling factor. First a train of steps of unequal height is considered where the step heights are assumed to be consistent with a steady-state motion so that each step moves with the same speed. It is possible to analyse this situation by asymptotic methods when the steps are either far apart or close together. Explicit results are given for both two- and three-step trains and it is shown how the step heights must vary if a given train is to move steadily at a specified speed. Trains of steps of equal height are also considered and an analysis is made of the relative velocities of such steps due to their interaction.

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Reply to comment on: Reassessing the nucleation and growth kinetics of solid state phase transformations

Materials Research Innovations ◽

10.1007/s100190050021 ◽

1997 ◽

Vol 1 (1) ◽

pp. 66-66

Author(s):

V. Erukhimovitch ◽

J. Baram

Keyword(s):

Solid State ◽

Phase Transformations ◽

Growth Kinetics ◽

Nucleation And Growth ◽

Kinetics Of

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Stressed solid-phase epitaxial growth of (011) Si

Journal of Materials Research ◽

10.1557/jmr.2009.0056 ◽

2009 ◽

Vol 24 (2) ◽

pp. 305-309 ◽

Cited By ~ 6

Author(s):

N.G. Rudawski ◽

K.S. Jones ◽

R. Gwilliam

Keyword(s):

Epitaxial Growth ◽

Growth Kinetics ◽

Growth Velocity ◽

Activation Volume ◽

Solid Phase ◽

Uniaxial Stress ◽

Atomistic Model ◽

Substrate Orientation ◽

Free Case ◽

Kinetics Of

The solid-phase epitaxial growth kinetics of amorphized (011) Si with application of in-plane uniaxial stress to magnitude of 0.9 ± 0.1 GPa were studied. Tensile stresses did not appreciably change the growth velocity compared with the stress-free case, whereas compression tended to retard the growth velocity to approximately one-half the stress-free value. The results are explained using a prior generalized atomistic model of stressed solid-solid phase transformations. In conjunction with prior observations of stressed solid-phase epitaxial growth of (001) Si, it is advanced that the activation volume tensor associated with ledge migration may be substrate orientation-dependent.

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