scholarly journals Effect of Elevated Hydrogen Partial Pressure on Mixed Culture Homoacetogenesis

2021 ◽  
pp. 100118
Author(s):  
Vasan Sivalingam ◽  
Tone Haugen ◽  
Alexander Wentzel ◽  
Carlos Dinamarca
2012 ◽  
Vol 97 (6) ◽  
pp. 2617-2625 ◽  
Author(s):  
Stefan de Kok ◽  
Jasper Meijer ◽  
Mark C. M. van Loosdrecht ◽  
Robbert Kleerebezem

1993 ◽  
Vol 312 ◽  
Author(s):  
D. P. Adamst ◽  
D. J. Eaglesham ◽  
S. M. Yalisove

AbstractHydrogen is shown to influence the surface roughness during low temperature Si MBE. Small partial pressures (1 × 10-7 Torr) of deuterium, introduced during Si growth at 310°C, are sufficient to increase the surface width to ∼30 Å before breakdown of epitaxy. This work is consistent with previous studies of the dependence of epitaxial thickness on hydrogen partial pressure and supports a model in which surface roughening leads to the breakdown of epitaxy.


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