A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer
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2014 ◽
Vol 378
(30-31)
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pp. 2184-2190
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2018 ◽
Vol 439
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pp. 934-945
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2020 ◽
Vol 4
(1)
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pp. 39-48