Guided quantum dot ordering by self-organized anisotropic strain engineering and step engineering on shallow-patterned substrates

2007 ◽  
Vol 301-302 ◽  
pp. 701-704 ◽  
Author(s):  
E. Selcuk ◽  
T.v. Lippen ◽  
G.J. Hamhuis ◽  
R. Nötzel
2002 ◽  
Vol 81 (9) ◽  
pp. 1705-1707 ◽  
Author(s):  
T. Mano ◽  
R. Nötzel ◽  
G. J. Hamhuis ◽  
T. J. Eijkemans ◽  
J. H. Wolter

2004 ◽  
Vol 95 (1) ◽  
pp. 109-114 ◽  
Author(s):  
T. Mano ◽  
R. Nötzel ◽  
G. J. Hamhuis ◽  
T. J. Eijkemans ◽  
J. H. Wolter

2003 ◽  
Vol 794 ◽  
Author(s):  
T. Mano ◽  
R. Nötzel ◽  
G. J. Hamhuis ◽  
T. J. Eijkemans ◽  
E. Smalbrugge ◽  
...  

ABSTRACTOne-dimensional (In,Ga)As quantum dot (QD) arrays are formed on planar singular and shallow-patterned (mesa gratings) GaAs (100) substrates by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) template in molecular beam epitaxy. On planar singular substrates, highly uniform one-dimensional single QD arrays, which are extended over 10 μm length, are realized with efficient photoluminescence. The shallow mesa gratings along [0–11] and [011] induce two different types of steps which differently affect the surface migration processes crucial for QWR template development, i.e., strain driven In adatom migration along [011] and surface reconstruction induced adatom migration along [0–11]. While type-A steps along [0–11] have no significant effect on the adatom migration along [011] and [0–11], type-B steps along [011] hinder the surface reconstruction induced migration along [0–11] to prevent formation of QWR and ordered QD arrays.


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