Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace

2012 ◽  
Vol 352 (1) ◽  
pp. 47-52 ◽  
Author(s):  
B. Gao ◽  
S. Nakano ◽  
H. Harada ◽  
Y. Miyamura ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
Unidirectional Solidification ◽  
Monocrystalline Silicon ◽  
Crucible Wall ◽  
Seeded Growth ◽  
Solidification Furnace

Numerical Simulation on the Suppression of Crucible Wall Constraint in Directional Solidification Furnace

Silicon ◽  
2018 ◽  
Vol 11 (2) ◽  
pp. 775-780 ◽  
Author(s):  
S. Sanmugavel ◽  
M. Srinivasan ◽  
K. Aravinth ◽  
P. Ramasamy
Keyword(s):  
Numerical Simulation ◽  
Directional Solidification ◽  
Crucible Wall ◽  
Solidification Furnace

Anisotropic Thermal Stress Simulation with Complex Crystal–Melt Interface Evolution for Seeded Growth of Monocrystalline Silicon

2012 ◽  
Vol 12 (11) ◽  
pp. 5708-5714 ◽  
Author(s):  
Bing Gao ◽  
Satoshi Nakano ◽  
Hirofumi Harada ◽  
Yoshiji Miyamura ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Monocrystalline Silicon ◽  
Seeded Growth ◽  
Interface Evolution ◽  
Complex Crystal ◽  
Stress Simulation
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