New strategy for improving the perovskite solar cells’ open-circuit voltage: Cation substitution of hole transport layer

2021 ◽  
Vol 121 ◽  
pp. 111262
Author(s):  
Xinshou Wang ◽  
Dongxing Kou ◽  
Canbin Ouyang ◽  
Jialei Liu
NANO ◽  
2019 ◽  
Vol 14 (10) ◽  
pp. 1950127 ◽  
Author(s):  
Farhad Jahantigh ◽  
S. M. Bagher Ghorashi

Perovskite solar cells have recently been considered to be an auspicious candidate for the advancement of future photovoltaic research. A power conversion efficiency (PCE) as high as 22% has been reported to be reached, which can be obtained through an inexpensive and high-throughput solution process. Modeling and simulation of these cells can provide deep insights into their fundamental mechanism of performance. In this paper, two different perovskite solar cells are designed by using COMSOL Multiphysics to optimize the thickness of each layer and the overall thickness of the cell. Electric potential, electron and hole concentrations, generation rate, open-circuit voltage, short-circuit current and the output power were calculated. Finally, PCEs of 20.7% and 26.1% were predicted. Afterwards, according to the simulation results, the role of the hole transport layer (HTL) was investigated and the optimum thickness of the perovskite was measured to be 200[Formula: see text]nm for both cells. Therefore, the spin coating settings are selected so that a coating with this thickness for cell 1 is deposited. In order to compare the performance of HTM layer, solar cells with a Spiro-OMeTAD HTM and without the HTM layer in their structure were fabricated. According to the obtained photovoltaic properties, the solar cell made with Spiro-OMeTAD has a more favorable open-circuit voltage ([Formula: see text]), short-circuit current density ([Formula: see text]), fill factor (FF) and PCE compared to the cell without the HTM layer. Also, hysteresis depends strongly on the perovskite grain size, because large average grain size will lead to an increase in the grain’s contact surface area and a decrease in the density of grain boundaries. Finally, according to the results, it was concluded that, in the presence of a hole transport layer, ion transfer was better and ion accumulation was less intense, and therefore, the hysteresis decreases.


2019 ◽  
Vol 7 (32) ◽  
pp. 18971-18979 ◽  
Author(s):  
Tian Du ◽  
Weidong Xu ◽  
Matyas Daboczi ◽  
Jinhyun Kim ◽  
Shengda Xu ◽  
...  

Reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p–i–n perovskite solar cells.


2017 ◽  
Vol 10 (5) ◽  
pp. 1207-1212 ◽  
Author(s):  
Juan-Pablo Correa-Baena ◽  
Wolfgang Tress ◽  
Konrad Domanski ◽  
Elham Halvani Anaraki ◽  
Silver-Hamill Turren-Cruz ◽  
...  

Dopants in the hole transport layer limit the open-circuit voltage of perovskite solar cells.


Nanoscale ◽  
2019 ◽  
Vol 11 (18) ◽  
pp. 8776-8784 ◽  
Author(s):  
Zhiqi Li ◽  
Jiajun Dong ◽  
Wenbin Han ◽  
Guanhua Ren ◽  
Chunyu Liu ◽  
...  

To overcome the intrinsic chemical-reduction-activity of highly p-doped PEDOT:PSS and improve the open-circuit voltage of planar inverted perovskite solar cells, an oxidized carbon nanorod is developed and incorporated into a PEDOT:PSS hole transport layer.


2021 ◽  
Vol 9 ◽  
Author(s):  
Hong Zhong ◽  
Renlai Zhou ◽  
Xiaoqing Wu ◽  
Xiaoyun Lin ◽  
Ya Wang ◽  
...  

We report our investigation on the S-shaped current–voltage characteristics in a hot-casting–processed (BA)2 (MA)3Pb4I13 Ruddlesden–Popper (RP) perovskite solar cell. The two-dimensional perovskite solar cells are fabricated with NiOx as the hole transport layer (HTL), which leads to significantly high open-circuit voltage (Voc). The champion device shows a Voc of 1.21 V and a short current density (Jsc) of 17.14 mA/cm2, leading to an overall power conversion efficiency (PCE) of 13.7%. Although the PCE is much higher than the control device fabricated on PEDOT:PSS, a significant S-shaped current–voltage behavior is observed in these NiOx-based devices. It is found that the S-shaped current–voltage behavior is related to the lower dimensional phase distribution and crystallinity at the bottom interface of the RP perovskite layer, and the S-shaped distortion is less severe after the device ageing test.


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