Anomaly enhancement of the dislocation velocity in SiC

2007 ◽  
Vol 401-402 ◽  
pp. 62-66 ◽  
Author(s):  
Gianluca Savini ◽  
Giancarlo Savini ◽  
Angela Marocchi ◽  
Irene Suarez-Martinez ◽  
Gemma Haffenden ◽  
...  
Keyword(s):  
1991 ◽  
Vol 58 (1) ◽  
pp. 48-50 ◽  
Author(s):  
Ichiro Yonenaga ◽  
Koji Sumino

1989 ◽  
Vol 23 (11) ◽  
pp. 1959-1962 ◽  
Author(s):  
C.S. Kim ◽  
T.J. Garosshen ◽  
J.M. Galligan

1994 ◽  
Vol 375 ◽  
Author(s):  
Xiaohong Hu ◽  
Kunlun Jia ◽  
Fuping Liu ◽  
Ian Baker ◽  
David Black

AbstractDislocation velocities have been measured in both lightly and heavily HCl-doped ice single crystals using synchrotron-based, monochromatic X-ray topography. In the temperature range −10°C to −30°C, a concentration of ˜1 × 10−6M was found not to affect the mobility of either 60° or screw basal dislocations, confirming the earlier observations of C. Shearwood and R. W. Whitworth [Philosophical Magazine A65, 1992, 85]. However, heavier doping (˜1.9 × 10−4M) increased the basal dislocation velocity, compared to pure ice, by a factor of 2.6 at −16.4°C.


1973 ◽  
Vol 27 (1) ◽  
pp. 81-86 ◽  
Author(s):  
M. J. Turunen ◽  
V. K. Lindroos

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