Application of Repetitive SA Method to Scheduling Problems of Chemical Processes

1997 ◽  
Vol 21 (1-2) ◽  
pp. S1087-S1092 ◽  
Author(s):  
Y Murakami
Keyword(s):  
Chemical Processes ◽  
Scheduling Problems

Application of repetitive SA method to scheduling problems of chemical processes

1997 ◽  
Vol 21 ◽  
pp. S1087-S1092 ◽  
Author(s):  
Y. Murakami ◽  
H. Uchiyama ◽  
S. Hasebe ◽  
I. Hashimoto
Keyword(s):  
Chemical Processes ◽  
Scheduling Problems

scholarly journals Application of Repetitive SA Method to Scheduling Problems of Chemical Processes

1997 ◽  
Vol 10 (3) ◽  
pp. 144-151
Author(s):  
Yoshihiro MURAKAMI ◽  
Hironobu UCHIYAMA ◽  
Shinji HASEBE ◽  
Iori HASHIMOTO
Keyword(s):  
Chemical Processes ◽  
Scheduling Problems

Two-Operation Crane Scheduling Problems

1982 ◽  
Vol 14 (3) ◽  
pp. 147-155 ◽  
Author(s):  
R. W. Lieberman ◽  
I. B. Turksen
Keyword(s):  
Scheduling Problems ◽  
Crane Scheduling

Application of Column Generation for Train-set Scheduling Problems with Regular Maintenance Constraints

2012 ◽  
Vol 132 (1) ◽  
pp. 151-159
Author(s):  
Akiyoshi Ohno ◽  
Tatsushi Nishi ◽  
Masahiro Inuiguchi ◽  
Satoru Takahashi ◽  
Kenji Ueda
Keyword(s):  
Column Generation ◽  
Scheduling Problems

Electrical Damage Due to Low Energy Plasma Processing of GaAs Structures

1991 ◽  
Vol 223 ◽  
Author(s):  
Hans P. Zappe ◽  
Gudrun Kaufel
Keyword(s):  
Chemical Processes ◽  
Low Energy ◽  
Electrical Behavior ◽  
Rapid Thermal Anneal ◽  
High Temperature Anneal ◽  
Significant Damage ◽  
Low Energies ◽  
Long Time ◽  
Physical Plasma

ABSTRACTThe effect of numerous plasma reative ion etch and physical milling processes on the electrical behavior of GaAs bulk substrates has been investigated by means of electric microwave absorption. It was seen that plasma treatments at quite low energies may significantly affect the electrical quality of the etched semiconductor. Predominantly physical plasma etchants (Ar) were seen to create significant damage at very low energies. Chemical processes (involving Cl or F), while somewhat less pernicious, also gave rise to electrical substrate damage, the effect greater for hydrogenic ambients. Whereas rapid thermal anneal treatments tend to worsen the electrical integrity, some substrates respond positively to long-time high temperature anneal steps.

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