Reactive ion etching of CVD-diamond for piezoresistive pressure sensors

2002 ◽  
Vol 11 (3-6) ◽  
pp. 841-844 ◽  
Author(s):  
R. Otterbach ◽  
U. Hilleringmann
Keyword(s):  
Reactive Ion Etching ◽  
Pressure Sensors ◽  
Cvd Diamond ◽  
Ion Etching ◽  
Piezoresistive Pressure Sensors

Effects at reactive ion etching of CVD diamond

2000 ◽  
Vol 368 (2) ◽  
pp. 222-226 ◽  
Author(s):  
I Bello ◽  
M.K Fung ◽  
W.J Zhang ◽  
K.H Lai ◽  
Y.M Wang ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Cvd Diamond ◽  
Ion Etching

scholarly journals Investigation on reactive ion etching CVD diamond Film

2007 ◽  
Vol 2007.4 (0) ◽  
pp. 7B207
Author(s):  
Choung-Lii Chao ◽  
Wen-Chen Chou ◽  
Ta-Tung Chen ◽  
Chung-Woei Chao
Keyword(s):  
Diamond Film ◽  
Reactive Ion Etching ◽  
Cvd Diamond ◽  
Ion Etching ◽  
Cvd Diamond Film

The Research of Diamond Coatings Morphology Evolution under the Action of Reactive Ion Etching in Perpendicular Direction

2016 ◽  
Vol 712 ◽  
pp. 87-92 ◽  
Author(s):  
Vitaly V. Okhotnikov ◽  
Stepan A. Linnik ◽  
Aleksandr V. Gaydaychuk
Keyword(s):  
Surface Roughness ◽  
Processing Time ◽  
Reactive Ion Etching ◽  
Cvd Diamond ◽  
Perpendicular Direction ◽  
Morphology Evolution ◽  
Average Surface Roughness ◽  
Diamond Coatings ◽  
Ion Etching

The evolution of the CVD diamond coatings morphology after perpendicular direction reactive ion etching was investigated. During the surface treatment, the average surface roughness was reduced. The efficiency of the etching decreases with the increasing of the processing time, until the surface roughness has been reduced by 30±5%. The height points spread over the surface were measured. The quality of the obtained films was investigated using the Raman spectroscopy.

Reactive ion etching of CVD diamond films for MEMS applications

2000 ◽  
Author(s):  
Guifu Ding ◽  
Xiaolin Zhao ◽  
Aibin Yu ◽  
Chunsheng Yang ◽  
Bingchu Cai ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Ion Etching

Reactive Ion Etching of CVD Diamond in CF4/O2, O2 and O2/Ar Plasmas

2000 ◽  
Vol 622 ◽  
Author(s):  
Patrick W. Leech ◽  
Geoffrey K. Reeves ◽  
Anthony S. Holland
Keyword(s):  
Bias Voltage ◽  
Chemical Etching ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Cvd Diamond ◽  
Flow Ratio ◽  
Ion Etching ◽  
Physical Sputtering ◽  
High Etch Rate ◽  
Low Rate

ABSTRACTThe reactive ion etching of diamond in O2, CF4/O2, CHF3/O2, O2/Ar) discharges has been examined as a function of bias voltage, flow rate and composition of the gas mixtures. Etching in O2 and O2/Ar plasmas (with flow ratio of O2/Ar >25% ) was characterised by a high etch rate (∼35 nm/min) and an increase in surface roughness with rising bias voltage. The CF4/O2 plasmas also produced a high etch rate (∼50 nm/min) but with only minor dependence of roughness on bias voltage. In comparison, the O2/Ar (with O2/Ar flow ratio <25%) and CHF3/O2 plasmas resulted in a low etch rate (7-10 nm/min). The high and low rate regimes were identified as ion- enhanced chemical etching and physical sputtering respectively. Etching in the O2/Ar plasmas has been attributed to a combination of the two processes dependent on the O2 content.

Reactive ion etching of CVD diamond thin films in O2/CF4 plasma

2004 ◽  
Vol 54 (S3) ◽  
pp. C1011-C1015
Author(s):  
T. Misu ◽  
M. Goto ◽  
T. Arai
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Cvd Diamond ◽  
Ion Etching ◽  
Diamond Thin Films

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching
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