Equatorial Electronic Structure in the Uranyl Ion: Cs2UO2Cl4 and Cs2UO2Br4

2021 ◽  
Author(s):  
Dumitru-Claudiu Sergentu ◽  
Frédéric Gendron ◽  
Eric D. Walter ◽  
Sejun Park ◽  
Cigdem Capan ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Uranyl Ion

The electronic structure of the uranyl ion

1976 ◽  
Vol 32 (2) ◽  
pp. 419-442 ◽  
Author(s):  
R.G. Denning ◽  
T.R. Snellgrove ◽  
D.R. Woodwark
Keyword(s):  
Electronic Structure ◽  
Uranyl Ion

The electronic structure and magnetic properties of uranyl-like ions I. Uranyl and neptunyl

1955 ◽  
Vol 229 (1176) ◽  
pp. 20-38 ◽  
Keyword(s):  
Magnetic Properties ◽  
Absorption Spectrum ◽  
Electronic Structure ◽  
Unpaired Electron ◽  
Energy Levels ◽  
Uranyl Ion ◽  
Bonding Mechanism ◽  
Paramagnetic Resonance

A theory of the electronic bonding in the uranyl ion is given, on the basis of which the paramagnetism of uranyl can be explained. Assuming the same bonding mechanism to be effective in neptunyl, with one unpaired electron, its energy levels, absorption spectrum, paramagnetic resonance and susceptibility are discussed. Agreement with experiment is satisfactory. The evidence points clearly to f -electrons being responsible for the magnetism.

The electronic structure of the uranyl ion

1980 ◽  
Vol 39 (5) ◽  
pp. 1281-1285 ◽  
Author(s):  
R.G. Denning ◽  
I.G. Short ◽  
D.R. Woodwark
Keyword(s):  
Electronic Structure ◽  
Uranyl Ion

The electronic structure of the uranyl ion

1979 ◽  
Vol 37 (4) ◽  
pp. 1109-1143 ◽  
Author(s):  
R.G. Denning ◽  
T.R. Snellgrove ◽  
D.R. Woodwark
Keyword(s):  
Electronic Structure ◽  
Uranyl Ion

The electronic structure of the uranyl ion

1979 ◽  
Vol 37 (4) ◽  
pp. 1089-1107 ◽  
Author(s):  
R.G. Denning ◽  
D.N.P. Foster ◽  
T.R. Snellgrove ◽  
D.R. Woodwark
Keyword(s):  
Electronic Structure ◽  
Uranyl Ion

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

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