Condensed Phase Isotope Effects, Especially Vapor Pressure Isotope Effects: Aqueous Solutions

Author(s):  
W. ALEXANDER VAN HOOK
1983 ◽  
Vol 38 (3) ◽  
pp. 317-321 ◽  
Author(s):  
E. Haid ◽  
D. Köhnlein ◽  
G. Kössler ◽  
O. Lutz ◽  
W. Messner ◽  
...  

Abstract45Sc NMR chemical shifts, linewidths, and longitudinal relaxation rates have been measured in aqueous solutions of scandium chloride and sulphate as a function of the appropriate acid. A common typical behaviour of these parameters without sudden changes has been observed. Also signals in the basic range have been obtained. H2O -D2O solvent isotope effects on Larmor frequency and relaxation rates are presented.


Molecules ◽  
2020 ◽  
Vol 25 (19) ◽  
pp. 4518
Author(s):  
Denis Balitsky ◽  
Etienne Philippot ◽  
Vladimir Balitsky ◽  
Ludmila Balitskaya ◽  
Tatiana Setkova ◽  
...  

Bulk GaPO4 is an advanced piezoelectric material operating under high temperatures according to the α-β phase transition at 970 °C. This work presents the technological development of a hydrothermal refluxing method first applied for GaPO4 single crystal growth. Crystals of 10–20 g were grown in mixtures of aqueous solutions of low- and high-vapor-pressure acids (H3PO4/HCl) at 180–240 °C (10–20 bars). The principal feature of the refluxing method is a spatial separation of crystal growth and nutrient dissolution zones. This leads to a constant mass transportation of the dissolved nutrient, even for materials with retrograde solubility. Mass transport is carried out by dissolution of GaPO4 nutrient in a dropping flow of condensed low-vapor-pressure solvent. This method allows an exact saturation at temperature of equilibrium and avoids spontaneous crystallization as well loss of seeds. Grown crystals have a moderate OH− content and reasonable structural uniformity. Moreover, the hydrothermal refluxing method allows a fine defining of GaPO4 concentration in aqueous solutions of H3PO4, H2SO4, HCl and their mixtures at set T–P parameters (T < 250 °C, p = 10–30 bars). The proposed method is relatively simple to use, highly reproducible for crystal growth of GaPO4 and probably could applied to other compounds with retrograde solubility.


1983 ◽  
Vol 87 (16) ◽  
pp. 3153-3160 ◽  
Author(s):  
Takao Oi ◽  
Jan Shulman ◽  
Anthony Popowicz ◽  
Takanobu Ishida

1977 ◽  
Vol 66 (10) ◽  
pp. 4433-4441 ◽  
Author(s):  
J. S. Pollin ◽  
Takanobu Ishida

1971 ◽  
Vol 75 (12) ◽  
pp. 1815-1820 ◽  
Author(s):  
J. L. Borowitz ◽  
Fritz S. Klein

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