COMPUTATION OF ε2-SPECTRA OF AMORPHOUS SEMICONDUCTORS

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-157-C3-165 ◽  
Author(s):  
B. KRAMER ◽  
K. MASCHKE ◽  
P. THOMAS
1981 ◽  
Vol 42 (C4) ◽  
pp. C4-395-C4-398 ◽  
Author(s):  
M. Wautelet ◽  
R. Andrew ◽  
M. Failly-Lovato ◽  
L. D. Laude

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-855-C4-864 ◽  
Author(s):  
E. A. Davis

1994 ◽  
Vol 75 (11) ◽  
pp. 7349-7355 ◽  
Author(s):  
D. S. Shen ◽  
J. P. Conde ◽  
V. Chu ◽  
S. Wagner

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.


1980 ◽  
Vol 35-36 ◽  
pp. 55-60 ◽  
Author(s):  
Morrel H. Cohen ◽  
J. Singh ◽  
F. Yonezawa

1988 ◽  
Vol 57 (6) ◽  
pp. 721-735 ◽  
Author(s):  
G. Weiser ◽  
U. Dersch ◽  
P. Thomas

1989 ◽  
Vol 156-157 ◽  
pp. 213-216 ◽  
Author(s):  
W.A. Kamitakahara ◽  
R. Biswas ◽  
A.M. Bouchard ◽  
F. Gompf

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