Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
1990 ◽
pp. 262-264
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1987 ◽
Vol 48
(C5)
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pp. C5-511-C5-515
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Keyword(s):
1987 ◽
Vol 48
(C5)
◽
pp. C5-239-C5-242
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Keyword(s):