multiple quantum wells
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Author(s):  
Hyeoncheol Kim ◽  
Kyu-Hwan Shim ◽  
Tae Soo Jeong ◽  
Sukill Kang ◽  
Taek Sung Kim

2021 ◽  
Vol 57 (6) ◽  
pp. 1-7
Author(s):  
Syed Ahmed Al Muyeed ◽  
Damir Borovac ◽  
Haotian Xue ◽  
Xiongliang Wei ◽  
Renbo Song ◽  
...  

2021 ◽  
Vol 88 (6) ◽  
pp. 895-899
Author(s):  
A. V. Danilchyk ◽  
A. V. Nagornyi ◽  
N. V. Rzheutskyi ◽  
A. G. Voinilovich ◽  
V. N. Pavlovskyi ◽  
...  

We investigated the radiative properties of InGaN/GaN heterostructures with multiple quantum wells (MQWs) grown on silicon substrates with different thicknesses of quantum wells at optical excitation. The correlation of laser and photoluminescent properties with the surface morphology of the gallium nitride coating layers and the density of V-defects has been established. It is shown that, with a growth in the density of V-defects, the threshold power density of the excitation of the generation of InGaN/GaN heterostructures with MQWs increases.


Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1390
Author(s):  
Jie Zhang ◽  
Wei Liu ◽  
Shuyuan Zhang

The electroluminescence (EL) properties of InGaN/AlGaN ultraviolet light-emitting multiple quantum wells (MQWs) with identical average In content but different In gradients (In content increases linearly, along the growth direction) are investigated numerically. It is found that the luminescence efficiency is improved, and the EL spectral peak wavelength becomes longer for the MQW sample with a larger In gradient. Since the influence of In gradient is different for the conduction and valence bands in InGaN layers, the distribution of electrons and holes in QWs may be changed, leading to a redshift of EL spectra. In particular, when the In gradient increases, the overlap integral of electron-hole wavefunction in InGaN QWs increases, resulting in a higher radiative recombination rate and an enhanced EL intensity.


Nano Letters ◽  
2021 ◽  
Author(s):  
Jaime Segura-Ruiz ◽  
Damien Salomon ◽  
Andrei Rogalev ◽  
Joël Eymery ◽  
Benito Alén ◽  
...  

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