Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current

T. Buonassisi; A. A. Istratov; M. D. Pickett; M. A. Marcus; G. Hahn; S. Riepe; J. Isenberg; W. Warta; G. Willeke; T. F. Ciszek; E. R. Weber

doi:10.1063/1.1997274

Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current

Applied Physics Letters ◽

10.1063/1.1997274 ◽

2005 ◽

Vol 87 (4) ◽

pp. 044101 ◽

Cited By ~ 23

Author(s):

T. Buonassisi ◽

A. A. Istratov ◽

M. D. Pickett ◽

M. A. Marcus ◽

G. Hahn ◽

...

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Multicrystalline Silicon ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

X Ray ◽

Spectrally Resolved

Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.37-38.189 ◽

1994 ◽

Vol 37-38 ◽

pp. 189-194 ◽

Cited By ~ 2

Author(s):

A. Barhdadi ◽

S. Sivoththaman ◽

M. Barbe ◽

M. Rodot ◽

J.L. Maurice

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Multicrystalline Silicon ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Factors influencing the minority carrier diffusion length in multicrystalline silicon produced in a HEM furnace

The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 ◽

10.1109/pvsc.1991.169362 ◽

2002 ◽

Author(s):

T.M. Bruton ◽

J.G. Summers ◽

B.E. Lord ◽

A.M. Mitchell ◽

D.W. Cunningham ◽

...

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Multicrystalline Silicon ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Factors Influencing

Study of minority carrier diffusion length in multicrystalline silicon solar cells using photoassisted Kelvin probe force microscopy

Applied Physics Letters ◽

10.1063/1.3264081 ◽

2009 ◽

Vol 95 (19) ◽

pp. 191908 ◽

Cited By ~ 16

Author(s):

Masaki Takihara ◽

Takuji Takahashi ◽

Toru Ujihara

Keyword(s):

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Kelvin Probe Force Microscopy ◽

Multicrystalline Silicon ◽

Silicon Solar Cells ◽

Kelvin Probe ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Force Microscopy

Influence of surface treatment on electrical activity of dislocations and minority carrier diffusion length in cast multicrystalline silicon

Materials Science and Engineering B ◽

10.1016/0921-5107(94)90301-8 ◽

1994 ◽

Vol 24 (1-3) ◽

pp. 74-77 ◽

Cited By ~ 4

Author(s):

A. Voigt ◽

H.P. Strunk

Keyword(s):

Electrical Activity ◽

Surface Treatment ◽

Minority Carrier ◽

Diffusion Length ◽

Multicrystalline Silicon ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion

Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.63-64.139 ◽

1998 ◽

Vol 63-64 ◽

pp. 139-146 ◽

Cited By ~ 3

Author(s):

A. Cremades ◽

M. Albrecht ◽

Axel Voigt ◽

J. Krinke ◽

R. Dimitrov ◽

...

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Microscopy Study ◽

Induced Current ◽

Transmission Microscopy ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.95-96.197 ◽

2003 ◽

Vol 95-96 ◽

pp. 197-204 ◽

Cited By ~ 11

Author(s):

Martin Kittler ◽

Winfried Seifert

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Multicrystalline Silicon ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Upper Limit

Depth profiling of the minority‐carrier diffusion length in intrinsically gettered silicon by electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.339942 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1569-1579 ◽

Cited By ~ 11

Author(s):

C. Donolato ◽

M. Kittler

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Depth Profiling ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current

Applied Physics Letters ◽

10.1063/1.3291046 ◽

2010 ◽

Vol 96 (2) ◽

pp. 022104 ◽

Cited By ~ 49

Author(s):

Gregory Brown ◽

Vladimir Faifer ◽

Alex Pudov ◽

Sergey Anikeev ◽

Eugene Bykov ◽

...

Keyword(s):

Electron Beam ◽

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Comments on ‘‘Measurements of minority‐carrier diffusion length in n‐CuInSe2 by electron‐beam‐induced current method’’ [J. Appl. Phys. 66, 5412 (1989)]

Journal of Applied Physics ◽

10.1063/1.346295 ◽

1990 ◽

Vol 68 (7) ◽

pp. 3759-3759

Author(s):

Keung L. Luke

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Current Method ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique

Journal of Applied Physics ◽

10.1063/1.368578 ◽

1998 ◽

Vol 84 (7) ◽

pp. 3986-3992 ◽

Cited By ~ 12

Author(s):

M. Tabib-Azar ◽

S. M. Hubbard ◽

C. M. Schnabel ◽

S. Bailey

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Crystal Defects ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Current Technique ◽

Electron Beam Induced Current