Heterogeneous diffusion with stochastic resetting

We study a heterogeneous diffusion process with position-dependent diffusion coefficient and Poissonian stochastic resetting. We find exact results for the mean squared displacement and the probability density function. The nonequilibrium steady state reached in the long time limit is studied. We also analyze the transition to the non-equilibrium steady state by finding the large deviation function. We found that similarly to the case of the normal diffusion process where the diffusion length grows like $t^{1⁄2}$ while the length scale ξ(t) of the inner core region of the nonequilibrium steady state grows linearly with time t, in the heterogeneous diffusion process with diffusion length increasing like $t^{p⁄2}$ the length scale ξ(t) grows like $t^{p}$. The obtained results are verified by numerical solutions of the corresponding Langevin equation.

Three modes of the nonstationary holographic current excitation in a gallium oxide crystal

We report the nonstationary holographic current excitation in a β-Ga2O3 crystal at light wavelength λ=457 nm. The material demonstrates insulating properties and high transparency for a visible light, but this, however, does not prevent the dynamic space-charge grating formation and the holographic current observation for various external electric fields - zero, dc and ac ones. The signal amplitude is measured and analyzed versus the frequency of phase modulation, spatial frequency and electric field value. The main photoelectric parameters such as specific photoconductivity, sensor responsivity and diffusion length of carriers are determined for the blue region of spectrum.

Organic Spacer Engineering in 2D/3D Hybrid Perovskites for Efficient and Stable Solar Cells

Perovskite solar cells (PSCs) have attracted widespread attention as their adjustable band gap, easy manufacture, and longer carrier diffusion length. However, the influence of environmental factors such as water, oxygen,...

Determination of hole diffusion length in n-GaN

The paper presents the derivation of a model for minority carriers collection based on the reciprocity theorem and its application for determination of hole diffusion length in n-GaN by means of photoluminescence. The estimated hole diffusion lengths at room temperature are 110 nm and 194 nm in the case of low and high excitation, respectively, which could be explained by saturation of non-radiative recombination centers in bulk GaN and at the surface with photogenerated carriers.

Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode

In this article, process of current flow in a nanowire radial p-i-n diode has been considered in detail. It has been shown that cylindrical geometry of the structure gives rise to specific asymmetry of the concentration distribution for current carriers injected to the i-layer, which is opposite to asymmetry that is due to inequality of carriers’ mobilities. This specific asymmetry rises with bringing the i-layer nearer to the nanowire center. Together with that, decrease of the current density in a “long” p-i-n diode and its increase in a “short” p-i-n diode take place (at given forward voltage). And variation of radial thickness of the i-layer demonstrates maximums in the current density at the thickness close to the bipolar diffusion length.

Vertically Optimized Phase Separation with Improved Exciton Diffusion Enables High-Efficiency Organic Solar Cells with Thick Active Layers

The development of high-performance organic solar cells (OSCs) with thick active layers is of crucial importance for the roll-to-roll printing of large-area solar panels. Unfortunately, increasing the active layer thickness usually results in a significant reduction in efficiency. Herein, we fabricated efficient thick-film OSCs with an active layer consisting of one polymer donor and two non-fullerene acceptors. The two acceptors were found to possess enlarged exciton diffusion length in the mixed phase, which is beneficial to exciton generation and dissociation. Additionally, layer by layer approach was employed to optimize the vertical phase separation. Benefiting from the synergetic effects of enlarged exciton diffusion length and graded vertical phase separation, a record high efficiency of 17.31% (certified value of 16.9%) was obtained for the 300 nm-thick OSC, with an unprecedented short-circuit current density of 28.36 mA cm−2, and a high fill factor of 73.0%. Moreover, the device with an active layer thickness of 500 nm also shows a record efficiency of 15.21%. This work provides new insights into the fabrication of high-efficiency OSCs with thick active layers.