Substrate design or reconstruction from free surface data for thin film flows

2008 ◽  
Vol 20 (6) ◽  
pp. 062106 ◽  
Author(s):  
Mathieu Sellier
2010 ◽  
Vol 5 (2) ◽  
pp. 219-225 ◽  
Author(s):  
Zhaomiao Liu ◽  
Xin Liu ◽  
Guobin Wang ◽  
Hong Liao

2001 ◽  
Vol 448 ◽  
pp. 387-410 ◽  
Author(s):  
SERAFIM KALLIADASIS ◽  
G. M. HOMSY

We consider the stability of the steady free-surface thin-film flows over topography examined in detail by Kalliadasis et al. (2000). For flow over a step-down, their computations revealed that the free surface develops a ridge just before the entrance to the step. Such capillary ridges have also been observed in the contact line motion over a planar substrate, and are a key element of the instability of the driven contact line. In this paper we analyse the linear stability of the ridge with respect to disturbances in the spanwise direction. It is shown that the operator of the linearized system has a continuous spectrum for disturbances with wavenumber less than a critical value above which the spectrum is discrete. Unlike the driven contact line problem where an instability grows into well-defined rivulets, our analysis demonstrates that the ridge is surprisingly stable for a wide range of the pertinent parameters. An energy analysis indicates that the strong stability of the capillary ridge is governed by rearrangement of fluid in the flow direction flowing to the net pressure gradient induced by the topography at small wavenumbers and by surface tension at high wavenumbers.


2000 ◽  
Vol 12 (8) ◽  
pp. 1889-1898 ◽  
Author(s):  
Serafim Kalliadasis ◽  
Catherine Bielarz ◽  
G. M. Homsy
Keyword(s):  

2003 ◽  
Vol 15 (9) ◽  
pp. 2512-2524 ◽  
Author(s):  
Catherine Bielarz ◽  
Serafim Kalliadasis

2007 ◽  
Vol 75 (2) ◽  
Author(s):  
Sergey Saprykin ◽  
Philip M. J. Trevelyan ◽  
Rudy J. Koopmans ◽  
Serafim Kalliadasis
Keyword(s):  

2000 ◽  
Vol 12 (12) ◽  
pp. 3305-3305 ◽  
Author(s):  
Serafim Kalliadasis ◽  
Catherine Bielarz ◽  
G. M. Homsy
Keyword(s):  

Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


2010 ◽  
Vol 22 (7) ◽  
pp. 073602 ◽  
Author(s):  
Emilie Dressaire ◽  
Laurent Courbin ◽  
Jérome Crest ◽  
Howard A. Stone
Keyword(s):  

Author(s):  
Mathieu Sellier ◽  
Satyananda Panda
Keyword(s):  

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