Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes

2013 ◽  
Vol 113 (12) ◽  
pp. 123501 ◽  
Author(s):  
T. M. Al tahtamouni ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Ultraviolet Light ◽  
Double Layer ◽  
Light Emitting Diodes ◽  
Buffer Layers ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Si Doped ◽  
Improved Performance ◽  
Aln Buffer ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Deep ultraviolet light-emitting diodes with improved performance via nanoporous AlGaN template

2019 ◽  
Vol 27 (4) ◽  
pp. 4917 ◽  
Author(s):  
L. Zhang ◽  
Y. N. Guo ◽  
J. C. Yan ◽  
Q. Q. Wu ◽  
X. C. Wei ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Improved Performance ◽  
Ultraviolet Light Emitting Diodes

Improved performance of 264 nm emission AlGaN-based deep ultraviolet light-emitting diodes

2008 ◽  
Vol 44 (7) ◽  
pp. 493 ◽  
Author(s):  
Y.H. Zhu ◽  
S. Sumiya ◽  
J.C. Zhang ◽  
M. Miyoshi ◽  
T. Shibata ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Improved Performance ◽  
Ultraviolet Light Emitting Diodes
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