265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions

2020 ◽  
Vol 13 (10) ◽  
pp. 102005 ◽  
Author(s):  
Ryota Ishii ◽  
Akira Yoshikawa ◽  
Kazuhiro Nagase ◽  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Selective Excitation ◽  
Photoluminescence Spectroscopy ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Excitation Conditions

Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes

2021 ◽  
Vol 129 (13) ◽  
pp. 133102
Author(s):  
Hongfeng Jia ◽  
Huabin Yu ◽  
Yang Kang ◽  
Zhongjie Ren ◽  
Muhammad Hunain Memon ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Quantum Structure ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Exfoliation of AlN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes

2018 ◽  
Vol 12 (1) ◽  
pp. 015505 ◽  
Author(s):  
Qingqing Wu ◽  
Yanan Guo ◽  
Suresh Sundaram ◽  
Jianchang Yan ◽  
Liang Zhang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Two Dimensional ◽  
Light Emitting ◽  
Aln Film ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes
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