Electronic structure of cadmium-telluride–zinc-telluride strained-layer superlattices under pressure

1989 ◽  
Vol 40 (8) ◽  
pp. 5522-5528 ◽  
Author(s):  
B. Gil ◽  
D. J. Dunstan ◽  
J. Calatayud ◽  
H. Mathieu ◽  
J. P. Faurie
Author(s):  
G. Duggan ◽  
K. J. Moore ◽  
K. Woodbridge ◽  
C. Roberts ◽  
N. J. Pulsford ◽  
...  

1988 ◽  
Vol 4 (4-5) ◽  
pp. 511-513 ◽  
Author(s):  
H. Rücker ◽  
F. Bechstedt ◽  
R. Enderlein ◽  
D. Hennig ◽  
S. Wilke

1989 ◽  
Vol 39 (6) ◽  
pp. 3741-3757 ◽  
Author(s):  
T. P. Pearsall ◽  
J. Bevk ◽  
J. C. Bean ◽  
J. Bonar ◽  
J. P. Mannaerts ◽  
...  

1989 ◽  
Vol 161 ◽  
Author(s):  
J.T. Mullins ◽  
P.A. Clifton ◽  
P.D. Brown ◽  
D.O. Hall ◽  
A.W. Brinkman

ABSTRACTHgTe:ZnTe superlattices have been grown by thermal MOVPE at temperatures down to 325°C. At this temperature, interdiffusion is sufficiently low to make superlattice periods as low as 45A practicable. The results of theoretical calculations of the electronic structure of these materials are also reported. These show that the electronic structure may be significantly different to that found for the HgTe:CdTe system due to the large biaxial compression present in the HgTe well layers.


1991 ◽  
Vol 6 (1) ◽  
pp. 18-26 ◽  
Author(s):  
A C Churchill ◽  
P C Klipstein ◽  
C J Gibbings ◽  
M A Gell ◽  
M E Jones ◽  
...  

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