cadmium telluride
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2021 ◽  
Vol 22 (4) ◽  
pp. 817-827
Author(s):  
T.M. Mazur ◽  
V.V. Prokopiv ◽  
M.P. Mazur ◽  
U.M. Pysklynets

An analysis of the use of semiconductor solar cells based on thin-film cadmium telluride (CdTe) in power engineering is carried out. It is shown that the advantages of thin-film technology and CdTe itself as a direct-gap semiconductor open up the prospect of large-scale production of competitive CdTe solar modules. The physical and technical problems of increasing the efficiency of CdS/CdTe heterostructure solar cells, which are significantly inferior to the theoretically possible value in mass production, are discussed. The state of CdTe thin-film solar cells, which make CdTe a suitable material for ground-based photoelectric conversion of solar energy, the historical development of the CdTe compound, the application of CdTe thin films, the main methods and strategies of device production, device analysis and fundamental problems related to the future development of thin-film modules based on cadmium telluride.


2021 ◽  
Vol 8 (1) ◽  
pp. 017002
Author(s):  
Hem Moktan ◽  
Raj Kumar Panta ◽  
Sang Hyun Cho

Abstract Commercially available fully spectroscopic pixelated cadmium telluride (CdTe) detector systems have been adopted lately for benchtop x-ray fluorescence (XRF) imaging/computed tomography (XFCT) of objects containing metal nanoprobes such as gold nanoparticles (GNPs). To date, however, some important characteristics of such detector systems under typical operating conditions of benchtop XRF/XFCT imaging systems are not well known. One important but poorly studied characteristic is the effect of detector bias-voltage on photon counting efficiency, energy resolution, and the resulting material detection limit. In this work, therefore, we investigated these characteristics for a commercial pixelated detector system adopting a 1-mm-thick CdTe sensor (0.25-mm pixel-pitch), known as HEXITEC, incorporated into an experimental benchtop cone-beam XFCT system with parallel-hole detector collimation. The detector system, operated at different bias-voltages, was used to acquire the gold XRF/Compton spectra from 1.0 wt% GNP-loaded phantom irradiated with 125 kVp x-rays filtered by 1.8-mm Tin. At each bias-voltage, the gold XRF signal, and the full-width-at-half-maximum at gold Kα 2 XRF peak (∼67 keV) provided photon counting efficiency and energy resolution, respectively. Under the current experimental conditions, the detector photon counting efficiency and energy resolution improved with increasing bias-voltage by ∼41 and ∼29% at −300V; ∼54 and ∼35% at −500V, respectively, when compared to those at −100V. Consequently, the GNP detection limit improved by ∼26% at −300V and ∼30% at −500V. Furthermore, the homogeneity of per-pixel energy resolution within the collimated detector area improved by ∼34% at −300V and ∼54% at −500V. These results suggested the gradual improvements in the detector performance with increasing bias-voltage up to −500V. However, at and beyond −550V, there were no discernible improvements in photon counting efficiency and energy resolution. Thus, the bias-voltage range of −500 to −550V was found optimal under the current experimental conditions that are considered typical of benchtop XRF/XFCT imaging tasks.


2021 ◽  
Author(s):  
Alexander Karapuzikov ◽  
Anton Klimkin ◽  
Grigorii Kokhanenko ◽  
Tatiana E. Kuraeva ◽  
Alexei Kurjak ◽  
...  

Author(s):  
Ya-Kang Peng ◽  
Feng-Xian Bai ◽  
Ge Huang ◽  
Hao Yu ◽  
Zuo-Yuan Dong ◽  
...  

Author(s):  
A. V. Voitsekhovskii ◽  
S. N. Nesmelov ◽  
S. M. Dzyadukh ◽  
S. A. Dvoretsky ◽  
N. N. Mikhailov ◽  
...  

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