Journal of Vacuum Science and Technology
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TOTAL DOCUMENTS

5283

(FIVE YEARS 0)

H-INDEX

114

(FIVE YEARS 0)

Published By American Vacuum Society

0022-5355

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Electron‐beam lithography three‐mark silicon automatic registration and its capabilities for process distortion compensation

Journal of Vacuum Science and Technology ◽

10.1116/1.571881 ◽

1982 ◽

Vol 21 (4) ◽

pp. 999-1004 ◽

Author(s):

Eric Tobias ◽

Allen Carroll

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Automatic Registration ◽

Distortion Compensation

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Chlorine and hydrogen chloride on clean and oxygen‐covered Fe(100): Bonding and reactions

Journal of Vacuum Science and Technology ◽

10.1116/1.571871 ◽

1982 ◽

Vol 21 (4) ◽

pp. 945-951 ◽

Author(s):

N. C. Debnath ◽

Alfred B. Anderson

Keyword(s):

Hydrogen Chloride

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Cryopump regeneration studies

Journal of Vacuum Science and Technology ◽

10.1116/1.571855 ◽

1982 ◽

Vol 21 (4) ◽

pp. 1022-1027 ◽

Author(s):

R. C. Longsworth ◽

G. E. Bonney

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Physics and Applications of the Josephson Effect by A. Barone and G. Paterno

Journal of Vacuum Science and Technology ◽

10.1116/1.571869 ◽

1982 ◽

Vol 21 (4) ◽

pp. 1050-1051 ◽

Author(s):

Robert M. White

Keyword(s):

Josephson Effect

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Preparation of Nuclear Targets for Particle Accelerators edited by Jozef Jaklovsky

Journal of Vacuum Science and Technology ◽

10.1116/1.571868 ◽

1982 ◽

Vol 21 (4) ◽

pp. 1049-1050

Author(s):

H. L. Adair

Keyword(s):

Particle Accelerators ◽

Nuclear Targets

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MOS (Metal Oxide Semiconductors) Physics and Technology by E. H. Nicollian and J. R. Brews

Journal of Vacuum Science and Technology ◽

10.1116/1.571867 ◽

1982 ◽

Vol 21 (4) ◽

pp. 1048-1049 ◽

Author(s):

H. H. Wieder

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductors ◽

Oxide Semiconductors

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The effect of the atomic incident angle upon the microstructure of thick beryllium deposits produced by physical vapor deposition

Journal of Vacuum Science and Technology ◽

10.1116/1.571878 ◽

1982 ◽

Vol 21 (4) ◽

pp. 980-985 ◽

Author(s):

T. G. Nieh ◽

R. F. Karlak ◽

A. E. Vidoz

Keyword(s):

Vapor Deposition ◽

Physical Vapor Deposition ◽

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Silicon nitride single‐layer x‐ray mask

Journal of Vacuum Science and Technology ◽

10.1116/1.571854 ◽

1982 ◽

Vol 21 (4) ◽

pp. 1017-1021 ◽

Author(s):

Misao Sekimoto ◽

Hideo Yoshihara ◽

Takashi Ohkubo

Keyword(s):

Silicon Nitride ◽

Single Layer ◽

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Deposition rate dependence of the critical optimization temperature for thin film properties: Evidence for the disordered area reevaporation mechanism

Journal of Vacuum Science and Technology ◽

10.1116/1.571877 ◽

1982 ◽

Vol 21 (4) ◽

pp. 972-979 ◽

Author(s):

P. S. Vincett

Keyword(s):

Thin Film ◽

Deposition Rate ◽

Rate Dependence ◽

Film Properties

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Growth and surface properties of lanthanum hexaboride crystals

Journal of Vacuum Science and Technology ◽

10.1116/1.571872 ◽

1982 ◽

Vol 21 (4) ◽

pp. 952-956 ◽

Author(s):

Toru Inoue ◽

Mitsuru Nakada ◽

Takahiko Uozumi ◽

Eizi Sugata

Keyword(s):

Surface Properties ◽

Lanthanum Hexaboride

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