A shallow buried-layer formation technique utilizing diffusion from implanted polysilicon layer

1989 ◽  
Vol 10 (7) ◽  
pp. 319-321
Author(s):  
K.K. O ◽  
H.-S. Lee ◽  
R. Reif ◽  
W. Frank ◽  
W. Metz ◽  
...  
1991 ◽  
Vol 235 ◽  
Author(s):  
A. Lauwers ◽  
K. Maex ◽  
W. Vandervorst ◽  
G. Brijs ◽  
J. Poortmans ◽  
...  

ABSTRACTThe implantation of high doses of Co in Si1−xGex alloys is investigated for several Ge concentrations. The aim of this work is to monitor phase formation, layer formation and crystalline structure of the layers. The samples are evaluated by RBS, SIMS, TEM and sheet resistance measurements. Similar as for the implantation of high doses of Co in Si, buried layer formation of CoSi2 in the Si1−x Gex alloy is observed with a concommitant expulsion of Ge out of the silicide layer.


2019 ◽  
Vol 90 ◽  
pp. 7-12 ◽  
Author(s):  
Jingwei Guo ◽  
Shengdong Hu ◽  
Ye Huang ◽  
Qi Yuan ◽  
Dong Yang ◽  
...  

1988 ◽  
Author(s):  
Tadashi SUZUKI ◽  
Masao TAMURA ◽  
Kiyonori OHYU ◽  
Nobuyoshi NATSUAKI

Author(s):  
T. SUZUKI ◽  
H. YAMAGUCHI ◽  
S. OHZONO ◽  
N. NATSUAKI

1989 ◽  
Vol 136 (3) ◽  
pp. 873-875
Author(s):  
M. N. Kozicki ◽  
J. M. Robertson ◽  
H. Kheyrandish ◽  
A. E. Hill

1996 ◽  
Vol 79 (12) ◽  
pp. 9118-9122 ◽  
Author(s):  
A. Medvid’ ◽  
I. Madzhulis ◽  
J. Kaupužs ◽  
J. Blūms

Vacuum ◽  
1991 ◽  
Vol 42 (5-6) ◽  
pp. 391 ◽  
Author(s):  
JA Kilner
Keyword(s):  

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