Study of CMOS Sensing System for Radon and Alpha Radiation

This study focuses on a CMOS sensing system for Radon and alpha radiation, which is based on a semiconductor device that is integrated monolithically on a single chip with the Readout Circuitry, thus allowing fabrication of a low-power and low-cost sensing system. The new sensor is based on a new mosaic design of an array of Floating Gate non-volatile memory-like transistors, which are implemented in a standard CMOS technology, with a single polysilicon layer. The transistors are electrically combined in parallel and are operated at subthreshold, thus achieving very high sensitivity and reduced noise. The sensing system’s architecture and design is presented, along with key operation concepts, characterization, and analysis results. Alpha and radon exposure results are compared to commercial radon detectors. The new sensor, dubbed TODOS-Radon sensor, measures continuously, is battery operated and insensitive to humidity.

Polysilicon devices as a highly compatible ESD protection with modulable voltage and low capacitance

The electronic circuits fabricated in a variety of technologies for different applications are all vulnerable to the electrostatic discharge (ESD) event. In this paper, polysilicon devices are investigated as ESD protection because of the noticeable advantages such as compatibility with several technologies, low parasitical capacitance, and little noise coupling. By forming the p-i-n diode in the polysilicon layer and stacking them together, the single polysilicon diode (SPD) and cascaded polysilicon diode (CasPD) are implemented in the 0.35 [Formula: see text] high voltage diffusion process. Through DC IV/CV, transmission line pulse (TLP), and zipping test, the CasPD presents as ESD protection for an S-band RF power amplifier, with high process-compatibility, modulable voltage, low leakage current and parasitic capacitance.

Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage

In this work, a capacitorless one-transistor embedded dynamic random-access memory based on a metal-oxide-semiconductor field-effect transistor with a double-polysilicon layer structure has been proposed and investigated using technology computer-aided design simulation. By using the grain boundary for hole storage, a higher sensing margin of 4.35 /μA//μm is achieved compared to that without using the grain boundary. Furthermore, the proposed device achieves a superior retention time of 555.77 /μs, which is reasonable from the viewpoint of its application in embedded systems (>100 /μs), even at a high temperature of 358 K. For higher device reliability, the effect of the grain boundary on the capacitorless one-transistor embedded dynamic random-access memory is analyzed with different trap distributions. The proposed capacitorless one-transistor embedded dynamic random-access memory cell exhibited superior reliability in terms of retention time (>100 /μs).

Microfluidic resonators with two parallel channels for independent sample loading and effective density tuning

ABSTRACTThis paper reports doubly clamped microchannel embedded resonators with two independent and parallel channels integrated for effective sample density tuning for the first time. With the aid of such a unique design, each fluidic channel can be independently accessed thus different liquid samples can be loaded simultaneously. The proposed fluidic resonators are batch fabricated by depositing silicon nitride, polysilicon, and silicon nitride sequentially on top of a set of 4-inch silicon wafers and sacrificing the middle polysilicon layer with potassium hydroxide (KOH). The sacrificial process defines two parallel channels and releases doubly clamped beam resonators simultaneously. In addition, an off-chip vacuum clamp with optical and fluidic access is custom-made to operate each resonator with enhanced quality factor. The microfluidic resonators mounted on the custom vacuum clamp are thoroughly characterized with a laser Doppler vibrometer and used to measure the effective sample density ranging from 395 to 998 kg/m3.

RESEARCH OF FORMATION PROCESS OF SUBMICRON ELEMENTS OF OPTOELECTRONIC DEVICES CONSIDERING INFORMATION PROTECTION REQUIREMENTS

In this paper, the term «hardware tab» is reviewed, critical stages of chip production on which tabs can occur are indicated, the possible consequences of tab activation are described. Also a method is described that does not allow the appearance of tabs, as an example of import substitution. The developed technological mode of submicron elements obtaining is shown, by the example of a polysilicon layer.