Optical one-dimensional waveguides in oxyfluoride glass fabricated by Helium Ion implantation

In this work, a one-dimensional waveguide is formed by virtue of the helium ion implantation in the oxyfluoride glass (OFG). The energy and the fluence of the ion implantation are 0.4 MeV and [Formula: see text] [Formula: see text], respectively. The m-line curve with the effective refractive indices of the modes was recorded by using the prism coupling system. The energy loss distribution and the refractive index profile were calculated by the stopping and range of ions into matter (SRIM)-2013 and the RCM, respectively. The light modal profile was measured by the end-facet coupling system. It suggests that the He[Formula: see text]-ion implanted OFG waveguides have the potential to act as integrated photonic devices.

Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are excellent materials for the next generation of high-power and high-frequency electronic devices. In fact, their wide band gap (>3 eV) and high critical electric field (>2 MV/cm) enable superior performances to be obtained with respect to the traditional silicon devices. Hence, today, a variety of diodes and transistors based on SiC and GaN are already available in the market. For the fabrication of these electronic devices, selective doping is required to create either n-type or p-type regions with different functionalities and at different doping levels (typically in the range 1016–1020 cm−3). In this context, due to the low diffusion coefficient of the typical dopant species in SiC, and to the relatively low decomposition temperature of GaN (about 900 °C), ion implantation is the only practical way to achieve selective doping in these materials. In this paper, the main issues related to ion implantation doping technology for SiC and GaN electronic devices are briefly reviewed. In particular, some specific literature case studies are illustrated to describe the impact of the ion implantation doping conditions (annealing temperature, electrical activation and doping profiles, surface morphology, creation of interface states, etc.) on the electrical parameters of power devices. Similarities and differences in the application of ion implantation doping technology in the two materials are highlighted in this paper.

Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN

We evaluated the beam current dependence of defect formation during Mg ion implantation into GaN at a high temperature of 1100℃ with two beam currents. Photoluminescence spectra suggested that low-beam-current ion implantation reduced the vacancy concentration and activated Mg to a greater extent. Moreover, scanning transmission electron microscopy analysis showed that low-beam-current implantation reduced the density of Mg segregation defects with inactive Mg and increased the number of intrinsic dislocation loops, suggesting a decrease in the density of Ga and N vacancies. The formation of these defects depended on beam current, which is an important parameter for defect suppression.