High-power operation in 0.98- mu m strained-layer InGaAs-GaAs single-quantum-well ridge waveguide lasers

1990 ◽  
Vol 2 (12) ◽  
pp. 849-851 ◽  
Author(s):  
T. Takeshita ◽  
M. Okayasu ◽  
S. Uehara
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Ridge Waveguide ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Waveguide Lasers ◽  
High Power Operation ◽  
Power Operation ◽  
Ridge Waveguide Lasers

High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers

1990 ◽  
Vol 57 (26) ◽  
pp. 2762-2763 ◽  
Author(s):  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
Y. J. Xu ◽  
H. Zaren ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
High Power Operation ◽  
Power Operation

High‐power operation of strained InGaAs/AlGaAs single quantum well lasers

1991 ◽  
Vol 59 (21) ◽  
pp. 2642-2644 ◽  
Author(s):  
A. Moser ◽  
A. Oosenbrug ◽  
E. E. Latta ◽  
Th. Forster ◽  
M. Gasser
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Power Operation ◽  
Power Operation
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