Highly reliable and high-power operation of 1.05 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes for pumping Tm-doped fiber amplifiers

2003 ◽  
Author(s):  
T. Hayakawa ◽  
F. Akinaga ◽  
T. Kuniyasu ◽  
K. Matsumoto ◽  
T. Fukunaga
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Fiber Amplifiers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation

High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes

1988 ◽  
Vol 53 (1) ◽  
pp. 1-3 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
T. Sasaki ◽  
H. Yamada ◽  
I. Mito
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation

High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers

1990 ◽  
Vol 57 (26) ◽  
pp. 2762-2763 ◽  
Author(s):  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
Y. J. Xu ◽  
H. Zaren ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
High Power Operation ◽  
Power Operation

High‐power operation of strained InGaAs/AlGaAs single quantum well lasers

1991 ◽  
Vol 59 (21) ◽  
pp. 2642-2644 ◽  
Author(s):  
A. Moser ◽  
A. Oosenbrug ◽  
E. E. Latta ◽  
Th. Forster ◽  
M. Gasser
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Power Operation ◽  
Power Operation
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