A 91 to 110-GHz tapered constructive wave power amplifier in a 0.12µm SiGe BiCMOS process

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bipol.2010.5667917 ◽

2010 ◽

Author(s):

Nader Kalantari ◽

James F. Buckwalter

Keyword(s):

Power Amplifier ◽

Sige Bicmos ◽

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A Q-Band/W-Band Dual-Band Power Amplifier in 0.12 µm SiGe BiCMOS Process

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2013.6659206 ◽

2013 ◽

Author(s):

Po-Yi Wu ◽

James F. Buckwalter

Keyword(s):

Power Amplifier ◽

Dual Band ◽

W Band ◽

Sige Bicmos ◽

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Analysis and design of a high power, high gain SiGe BiCMOS output stage for use in a millimeter-wave power amplifier

2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) ◽

10.1109/prime.2014.6872749 ◽

2014 ◽

Author(s):

Ramses Pierco ◽

Timothy De Keulenaer ◽

Guy Torfs ◽

Johan Bauwelinck

Keyword(s):

Millimeter Wave ◽

Power Amplifier ◽

High Gain ◽

Output Stage ◽

Analysis And Design ◽

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An injection-locked power oscillator in 0.35 μm SiGe BiCMOS process for power amplifier driver

Microwave and Optical Technology Letters ◽

10.1002/mop.31183 ◽

2018 ◽

Vol 60 (6) ◽

pp. 1515-1519

Author(s):

Ho-Chang Lee ◽

Sheng-Lyang Jang ◽

Ji-Shin Chiou

Keyword(s):

Power Amplifier ◽

Power Oscillator ◽

Sige Bicmos ◽

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A Wideband, Dual-Path, Millimeter-Wave Power Amplifier With 20 dBm Output Power and PAE Above 15% in 130 nm SiGe-BiCMOS

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2012.2201275 ◽

2012 ◽

Vol 47 (9) ◽

pp. 1981-1997 ◽

Author(s):

Yi Zhao ◽

John R. Long

Keyword(s):

Output Power ◽

Millimeter Wave ◽

Power Amplifier ◽

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A 250-310 GHz Power Amplifier with 15-dB Peak Gain in 130-nm SiGe BiCMOS Process for Terahertz Wireless System

IEEE Transactions on Terahertz Science and Technology ◽

10.1109/tthz.2021.3099057 ◽

2021 ◽

pp. 1-1

Author(s):

Xingcun Li ◽

Wenhua Chen ◽

Peigen Zhou ◽

Yunfan Wang ◽

Fei Huang ◽

...

Keyword(s):

Power Amplifier ◽

Wireless System ◽

Sige Bicmos ◽

Bicmos Process ◽

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A Concurrent $Ku/K/Ka$ Tri-Band Distributed Power Amplifier With Negative-Resistance Active Notch Using SiGe BiCMOS Process

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2013.2292673 ◽

2014 ◽

Vol 62 (1) ◽

pp. 125-136 ◽

Author(s):

Kyoungwoon Kim ◽

Cam Nguyen

Keyword(s):

Power Amplifier ◽

Negative Resistance ◽

Distributed Power ◽

Sige Bicmos ◽

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A 19.4 dBm, Q-Band Class-E Power Amplifier in a 0.12 $\mu {\rm m}$ SiGe BiCMOS Process

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2010.2045594 ◽

2010 ◽

Vol 20 (5) ◽

pp. 283-285 ◽

Author(s):

Nader Kalantari ◽

James F. Buckwalter

Keyword(s):

Power Amplifier ◽

Sige Bicmos ◽

Bicmos Process ◽

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A 2.1 GHz 30 dBm power amplifier in 0.18 μm SiGe BiCMOS process

Microwave and Optical Technology Letters ◽

10.1002/mop.31066 ◽

2018 ◽

Vol 60 (4) ◽

pp. 834-840

Author(s):

Zhiqun Li ◽

Shidong He ◽

Bihui Zhu ◽

Chi Zhang

Keyword(s):

Power Amplifier ◽

Sige Bicmos ◽

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A W-band power amplifier with LC balun in 0.13 μm SiGe BiCMOS process

2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) ◽

10.1109/rfit.2017.8048249 ◽

2017 ◽

Author(s):

Huanbo Li ◽

Jixin Chen ◽

Debin Hou ◽

Su Peng ◽

Wei Hong

Keyword(s):

Power Amplifier ◽

W Band ◽

Sige Bicmos ◽

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A 60GHz power amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS process

2013 International SoC Design Conference (ISOCC) ◽

10.1109/isocc.2013.6863955 ◽

2013 ◽

Author(s):

Wei Meng Lim ◽

Jiangmin Gu ◽

Jialin Feng ◽

Kiat Seng Yeo ◽

Xiaopeng Yu ◽

...

Keyword(s):

Power Amplifier ◽

Sige Bicmos ◽

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