Bulk damage threshold and three-dimensional microstructuring of dielectrics using the self-focusing of ultrashort laser pulses

1998 ◽  
Author(s):  
D. Ashkenasi ◽  
A. Rosenfeld ◽  
H. Varel ◽  
M. Lorenz ◽  
E.E.B. Campbell
1997 ◽  
Author(s):  
Daniel X. Hammer ◽  
Gary D. Noojin ◽  
Robert J. Thomas ◽  
Richard A. Hopkins ◽  
Paul K. Kennedy ◽  
...  

2003 ◽  
Author(s):  
Stefan Nolte ◽  
Matthias Will ◽  
Jonas Burghoff ◽  
Andreas Tuennermann

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 754
Author(s):  
Igor Kinyaevskiy ◽  
Pavel Danilov ◽  
Nikita Smirnov ◽  
Sergey Kudryashov ◽  
Andrey Koribut ◽  
...  

Ablation of BaWO4 Raman crystals with different impurity concentrations by ultrashort laser pulses was experimentally studied. Laser pulses with duration varying from 0.3 ps to 1.6 ps at wavelengths of 515 nm and 1030 nm were applied. A single-pulse optical damage threshold of the crystal surface changed from 1.3 J/cm2 to 4.2 J/cm2 depending on the laser pulse parameters and BaWO4 crystal purity. The optical damage threshold under multi-pulse irradiation was an order of magnitude less.


2021 ◽  
Vol 2015 (1) ◽  
pp. 012104
Author(s):  
Olesia Pashina ◽  
Daniil Ryabov ◽  
George Zograf ◽  
Sergey Makarov ◽  
Mihail Petrov

Abstract We develop a model describing non-equilibrium processes under the excitation of resonant semiconductor nanostructures with ultrashort laser pulses with a duration of about 100 fs. We focus on the heating effects related to pulsed excitation with account on free carriers generation, thermalization, and relaxation. The heat exchange between the electron and phonon system is treated within the two-temperature model. We applied the developed model to describing pulsed heating of silicon nanocylinder on top of a dielectric substrate. We come up with estimations of the thermal damage threshold of the considered structures which provides the limits for the experimental conditions and ensures thermal stability of the samples.


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