Second harmonic generation of femtosecond Yb3+:KY(WO4)2 laser radiation was investigated in semiconductor heterostructure grown at the singular GaAs substrate of orientation (001) and including a set of asymmetric quantum wells. Azimuth second harmonic dependence was investigated in transmission for the incidence angles of 10–70 degree, and in reflection for incidence angle of 45 degree by application of p- and s-polarized pumping radiation. Second harmonic signals from heterostructure were several times higher than those from the substrate at p-polarized pumping in transmission and for the cases of p- and s-polarized pumping in reflection. The case of s-polarized pumping radiation and p-polarized second harmonic radiation in reflection resulted in high isotropic contribution from the heterostructure to second harmonic; here, the azimuth dependencies from the heterostructure and from the substrate are essentially different
Modeling of second harmonic generation in hole-doped silicon-germanium quantum wells for mid-infrared sensing