Imaging performance comparison of novel CMOS low-light-level image sensor and electron multiplying CCD sensor

Author(s):  
Song Yang ◽  
Xuxia Zhuang ◽  
Fang Xue ◽  
Qian Sun ◽  
Ningjuan Ruan
1980 ◽  
Vol 15 (4) ◽  
pp. 753-758 ◽  
Author(s):  
M.G. Farrier ◽  
R.H. Dyck

2018 ◽  
Vol 38 (9) ◽  
pp. 0911001
Author(s):  
张元涛 Zhang Yuantao ◽  
柴孟阳 Chai Mengyang ◽  
孙德新 Sun Dexin ◽  
刘银年 Liu Yinnian
Keyword(s):  

2009 ◽  
Author(s):  
Boyd Fowler ◽  
Chiao Liu ◽  
Steve Mims ◽  
Janusz Balicki ◽  
Wang Li ◽  
...  

2005 ◽  
Vol 869 ◽  
Author(s):  
Juergen Sterzel ◽  
Frank Blecher

AbstractThanks to its three-dimensional integration and the use of amorphous as well as crystalline silicon, the TFA technology is suitable for advanced image sensor applications. This paper describes the fundamentals of the properties: sensitivity, dark current, temporal and fixed-pattern noise of these TFA image sensors. It compares the different sensitivity definitions, especially current sensitivity and the charge conversion factor. Further, the dark current sources are pointed out, and their temperature behavior is described. By noise calculations, different pixel input stages are compared with regard to low light level detection.


2009 ◽  
Vol 44 (12) ◽  
pp. 3603-3608 ◽  
Author(s):  
Ryu Shimizu ◽  
Mamoru Arimoto ◽  
Hayato Nakashima ◽  
Kaori Misawa ◽  
Toshikazu Ohno ◽  
...  

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