High-power Al-free active region InGaAsP/GaAs (lambda = 852 nm) laser diodes for atomic clocks and interferometry applications

2004 ◽  
Author(s):  
Francois-Julien Vermersch ◽  
Michel Lecomte ◽  
Michel Calligaro ◽  
Olivier Parillaud ◽  
Shailendra Bansropun ◽  
...  
2006 ◽  
Author(s):  
V. Ligeret ◽  
F.-J. Vermersch ◽  
S. Bansropun ◽  
M. Lecomte ◽  
M. Calligaro ◽  
...  

Author(s):  
F.-J. Vermersck ◽  
M. Lecomte ◽  
M. Calligaro ◽  
O. Parillaud ◽  
S. Bansropun ◽  
...  

2007 ◽  
Author(s):  
V. Ligeret ◽  
F. J. Vermersch ◽  
S. Bansropun ◽  
M. Lecomte ◽  
M. Calligaro ◽  
...  

2005 ◽  
Author(s):  
Francois-Julien Vermersch ◽  
Michel Lecomte ◽  
Michel Calligaro ◽  
Olivier Parillaud ◽  
Shailendra Bansropun ◽  
...  

Author(s):  
V. Ligeret ◽  
F.-J. Vermersch ◽  
S. Bansropun ◽  
M. Lecomte ◽  
M. Calligaro ◽  
...  

2015 ◽  
Author(s):  
N. Von Bandel ◽  
J. Bébé Manga Lobé ◽  
M. Garcia ◽  
A. Larrue ◽  
Y. Robert ◽  
...  

2012 ◽  
Vol 48 (4) ◽  
pp. 465-471 ◽  
Author(s):  
Andrzej Malag ◽  
Elżbieta Dabrowska ◽  
Marian Teodorczyk ◽  
Grzegorz Sobczak ◽  
Anna Kozlowska ◽  
...  

Author(s):  
N. Von Bandel ◽  
M. Myara ◽  
P. Signoret ◽  
A. Larrue ◽  
O. Parillaud ◽  
...  

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