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High-power Al-free active region InGaAsP/GaAs (lambda = 852 nm) laser diodes for atomic clocks and interferometry applications
Mapping Intimacies
◽
10.1117/12.572932
◽
2004
◽
Author(s):
Francois-Julien Vermersch
◽
Michel Lecomte
◽
Michel Calligaro
◽
Olivier Parillaud
◽
Shailendra Bansropun
◽
...
Keyword(s):
Active Region
◽
High Power
◽
Laser Diodes
◽
Atomic Clocks
Download Full-text
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High-Power Al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications
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2006
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High-power Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference
◽
10.1109/cleo.2006.4628768
◽
2006
◽
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High-power Al-free active region ridge laser diodes for atomic clocks
CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005.
◽
10.1109/cleoe.2005.1567927
◽
2006
◽
Author(s):
F.-J. Vermersck
◽
M. Lecomte
◽
M. Calligaro
◽
O. Parillaud
◽
S. Bansropun
◽
...
Keyword(s):
Active Region
◽
High Power
◽
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Narrow linewidth, high-power Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
10.1117/12.700480
◽
2007
◽
Author(s):
V. Ligeret
◽
F. J. Vermersch
◽
S. Bansropun
◽
M. Lecomte
◽
M. Calligaro
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...
Keyword(s):
Active Region
◽
High Power
◽
Laser Diodes
◽
Atomic Clocks
◽
Narrow Linewidth
◽
Dfb Laser
Download Full-text
High-power Al-free active region (lambda = 852 nm) laser diodes for atomic clocks and interferometry applications
10.1117/12.588730
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Cited By ~ 1
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Michel Calligaro
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Shailendra Bansropun
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Keyword(s):
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Laser Diodes
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High-power Al-free active region (?= 852nm) DFB laser diodes for atomic clocks and interferometry applications
International Conference on Space Optics — ICSO 2006
◽
10.1117/12.2308104
◽
2017
◽
Author(s):
V. Ligeret
◽
F.-J. Vermersch
◽
S. Bansropun
◽
M. Lecomte
◽
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...
Keyword(s):
Active Region
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◽
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Atomic Clocks
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Al-free active region laser diodes at 894 nm for compact Cesium atomic clocks
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◽
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◽
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◽
J. Bébé Manga Lobé
◽
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◽
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◽
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◽
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Active Region
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Asymmetric Heterostructure With Reduced Distance From Active Region to Heatsink for 810-nm Range High-Power Laser Diodes
IEEE Journal of Quantum Electronics
◽
10.1109/jqe.2012.2184741
◽
2012
◽
Vol 48
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◽
pp. 465-471
◽
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◽
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◽
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◽
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◽
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◽
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High Power Laser
◽
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Study of correlation between optical characteristics and mirror facet temperature of the active region in high-power SCH SQW InGaAs/GaAs and InGaAsP/GaAs laser diodes
10.1117/12.176609
◽
1994
◽
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◽
Dmitry Z. Garbuzov
◽
T. A. Grishina
◽
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◽
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Keyword(s):
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◽
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Laser Diodes
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Al-Free Active Region DFB Laser Diodes operating at 894nm for compact Cesium Atomic Clocks
Conference on Lasers and Electro-Optics
◽
10.1364/cleo_at.2016.jth2a.44
◽
2016
◽
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◽
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◽
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◽
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◽
...
Keyword(s):
Active Region
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Laser Diodes
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Atomic Clocks
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Dfb Laser
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