Study of correlation between optical characteristics and mirror facet temperature of the active region in high-power SCH SQW InGaAs/GaAs and InGaAsP/GaAs laser diodes

1994 ◽  
Author(s):  
Nikolay I. Katsavets ◽  
Dmitry Z. Garbuzov ◽  
T. A. Grishina ◽  
Irena E. Kudrik ◽  
Petr V. Pitkianen
Keyword(s):  
Active Region ◽  
High Power ◽  
Laser Diodes ◽  
Optical Characteristics ◽  
Gaas Laser

Asymmetric Heterostructure With Reduced Distance From Active Region to Heatsink for 810-nm Range High-Power Laser Diodes

2012 ◽  
Vol 48 (4) ◽  
pp. 465-471 ◽  
Author(s):  
Andrzej Malag ◽  
Elżbieta Dabrowska ◽  
Marian Teodorczyk ◽  
Grzegorz Sobczak ◽  
Anna Kozlowska ◽  
...  
Keyword(s):  
Active Region ◽  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser ◽  
Nm Range

Neutron effects in high-power GaAs laser diodes

1989 ◽  
Vol 36 (6) ◽  
pp. 2076-2082 ◽  
Author(s):  
R.F. Carson ◽  
W.W. Chow
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Gaas Laser

Theoretical investigation of minority carrier leakages of high‐power 0.8 μm InGaAsP/InGaP/GaAs laser diodes

1994 ◽  
Vol 65 (18) ◽  
pp. 2260-2262 ◽  
Author(s):  
J. Diaz ◽  
I. Eliashevich ◽  
H. Yi ◽  
X. He ◽  
M. Stanton ◽  
...  
Keyword(s):  
Theoretical Investigation ◽  
High Power ◽  
Minority Carrier ◽  
Laser Diodes ◽  
Gaas Laser

AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature

1999 ◽  
Vol 38 (Part 1, No. 1A) ◽  
pp. 74-76 ◽  
Author(s):  
Zaman Iqbal Kazi ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Active Region ◽  
Characteristic Temperature ◽  
Laser Diodes ◽  
Si Substrate ◽  
Gaas Laser

Study of Deformation in the Active Region of GaAs/GaAlAs Laser Diodes

2013 ◽  
Vol 333-335 ◽  
pp. 332-335
Author(s):  
Jin Ling Wu ◽  
Xin Nian Wang ◽  
Lan Dang Yuan
Keyword(s):  
Shear Stress ◽  
Thermal Stress ◽  
Active Region ◽  
Mechanical Stress ◽  
Bulk Material ◽  
Laser Diodes ◽  
Dislocation Motion ◽  
Gaas Laser ◽  
Spectral Splitting

The paper presents an investigation of deformation in the active region of GaAs laser diodes under operating conditions.Since the properties of bulk material and manufactured diode are not identical,a study of the spectral splitting and polarisation changes caused by mechanical stress in the diode is made.These results are used to calibrate instruments for a study of the deformation due to thermal stress in the diode under operating conditions.This thermal stress can exceed the shear stress required for dislocation motion in the active region of the diode.

High-Power Al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications

2006 ◽  
Author(s):  
V. Ligeret ◽  
F.-J. Vermersch ◽  
S. Bansropun ◽  
M. Lecomte ◽  
M. Calligaro ◽  
...  
Keyword(s):  
Active Region ◽  
High Power ◽  
Laser Diodes ◽  
Atomic Clocks

Facet heating and axial temperature profiles in high-power GaAlAs/GaAs laser diodes

1998 ◽  
Vol 38 (5) ◽  
pp. 821-825 ◽  
Author(s):  
U. Menzel ◽  
R. Puchert ◽  
A. Bärwolff ◽  
A. Lau
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Temperature Profiles ◽  
Axial Temperature ◽  
Gaas Laser

Strain-compensated active region of high-power laser diodes based on AlxGayIn1-x-yAs/InP

2020 ◽  
Author(s):  
V. N. Svetogorov ◽  
Yu. L. Ryaboshtan ◽  
M. A. Ladugin ◽  
A. A. Marmalyuk ◽  
O. O. Bagaeva ◽  
...  
Keyword(s):  
Active Region ◽  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser
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