Techniques Of Measurement Of The Polarization-Altering Properties Of Linear Optical Systems

Author(s):  
P. S. Hauge
1990 ◽  
Vol 22 (6) ◽  
pp. 501-515 ◽  
Author(s):  
M. A. Vorontsov ◽  
N. I. Zheleznykh ◽  
V. Yu. Ivanov

2011 ◽  
Vol 1288 ◽  
Author(s):  
O. Martínez ◽  
M. Avella ◽  
V. Hortelano ◽  
J. Jiménez ◽  
M. Snure ◽  
...  

ABSTRACTOrientation patterned (OP)-GaAs crystals have high potential as non linear optical systems. Mid-infrared and terahertz lasers sources can be fabricated with these crystals by frequency conversion from shorter wavelength sources. The optical propagation losses are critical; therefore, the OP-GaAs crystals must have high quality with low incorporation of defects and high homogeneity to reduce the refractive index fluctuations. Defects with electro-optic signature must be characterized in order to reduce their presence. Cathodoluminescence studies of these crystals permit the distribution of the main defects to be established, both extended and point defects. Special attention is paid to the role of the walls between the two domain orientations, and to the incorporation of impurities in Si-doped samples.


2019 ◽  
Vol 27 (9) ◽  
pp. 12080 ◽  
Author(s):  
Takuya Arakawa ◽  
Fumihiko Ito ◽  
Daisuke Iida ◽  
Tetsuya Manabe

1972 ◽  
Vol 11 (10) ◽  
pp. 2210 ◽  
Author(s):  
R. M. A. Azzam ◽  
N. M. Bashara

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