Growth and characterization of orientation patterned GaAs crystals for non-linear optical frequency conversion

2011 ◽  
Vol 1288 ◽  
Author(s):  
O. Martínez ◽  
M. Avella ◽  
V. Hortelano ◽  
J. Jiménez ◽  
M. Snure ◽  
...  

ABSTRACTOrientation patterned (OP)-GaAs crystals have high potential as non linear optical systems. Mid-infrared and terahertz lasers sources can be fabricated with these crystals by frequency conversion from shorter wavelength sources. The optical propagation losses are critical; therefore, the OP-GaAs crystals must have high quality with low incorporation of defects and high homogeneity to reduce the refractive index fluctuations. Defects with electro-optic signature must be characterized in order to reduce their presence. Cathodoluminescence studies of these crystals permit the distribution of the main defects to be established, both extended and point defects. Special attention is paid to the role of the walls between the two domain orientations, and to the incorporation of impurities in Si-doped samples.

2012 ◽  
Vol 1396 ◽  
Author(s):  
V. Hortelano ◽  
O. Martínez ◽  
J. Jiménez ◽  
M. Snure ◽  
C. Lynch ◽  
...  

ABSTRACTOrientation patterned (OP)-GaAs crystals are attractive materiasl for mid-infrared and terahertz lasers sources, using non linear optics frequency conversion from shorter wavelength sources. The optical propagation losses are critical to the fabrication of these sources; among the causes of optical losses the generation of defects and the incorporation of impurities must play a relevant role. The control of the incorporation of impurities and defects is, therefore, crucial to improve the performance of the OP-GaAs crystals as non linear optical materials. We present herein a cathodoluminescence (CL) analysis of OP-GaAS crystals intentionally doped with Si, in order to understand the incorporation paths of Si in the OP-GaAs crystals.


2011 ◽  
Author(s):  
Alessandra Ciapponi ◽  
Wolfgang Riede ◽  
Georgios Tzeremes ◽  
Helmut Schröder ◽  
Peter Mahnke

1990 ◽  
Vol 22 (6) ◽  
pp. 501-515 ◽  
Author(s):  
M. A. Vorontsov ◽  
N. I. Zheleznykh ◽  
V. Yu. Ivanov

1990 ◽  
Vol 200 ◽  
Author(s):  
A. Y. Wu ◽  
Feiling Wang ◽  
Ching-Bo Juang ◽  
Carlos Bustamante

ABSTRACTThe electro-optic properties of sputter-deposited PLZT, BaTiO3, SBN, and BNN films on fused silica substrates have been studied using a confocal scanning optical polarization microscope. The Pockels, Kerr, and higher order electro-optic coefficients and their relations to the non-linear optical coefficients in the films are presented. The materials and physical properties of the films are discussed.


1992 ◽  
Vol 277 ◽  
Author(s):  
Jang-Joo Kim ◽  
Do-Hoon Hwang ◽  
Shin-Woong Kang ◽  
Hong-Ku Shim

ABSTRACTPoly(CMPV-co-PV) have been synthesized via water soluble sulfonium salt precursor route and their linear and non-linear optical properties were characterized. The electro-optic response was stable up to 100°C when the materials were poled during the elimination. The thermal stability and mechanical strength of PPV and its derivatives, and easy processibility from the precursor polymers suggest a new approach for the molecular design of the 2nd order non-linear optical polymers.


2020 ◽  
Vol 45 (2) ◽  
pp. 467 ◽  
Author(s):  
Xun Liu ◽  
Xueju Shen ◽  
Ting Rui ◽  
Lei He ◽  
Bing Zhou ◽  
...  

1997 ◽  
Vol 495 ◽  
Author(s):  
B. W. Wessels

ABSTRACTFerroelectric oxide epitaxial thin films are potentially important for a variety of guided-wave electro-optic and non-linear optical applications. Metalorganic chemical vapor deposition has been used to synthesize epitaxial thin films of a number of ferroelectric oxides. The films now have sufficient optical quality to enable the fabrication of waveguide devices including electro-optic modulators and optical amplifiers for 1.54 microns.


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