2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

In neuromorphic hardware, peripheral circuits and memories based on heterogeneous devices are generally physically separated. Thus exploring homogeneous devices for these components is an important issue for improving module integration and resistance matching. Inspired by ferroelectric proximity effect on two-dimensional materials, we present a tungsten diselenide-on-LiNbO3 cascaded architecture as a basic device that functions as a nonlinear transistor, assisting the design of operational amplifiers for analog signal processing (ASP). It also functions as a nonvolatile memory cell, achieving memory operating (MO). Based on this homogeneous architecture, an analog signal processing-memory operating integrated system for binary classification and the design of ternary content-addressable memory were investigated for potential use in neuromorphic hardware.