scholarly journals Fine-grain parallelism with minimal hardware support: a compiler-controlled threaded abstract machine

1991 ◽  
Vol 25 (Special Issue) ◽  
pp. 164-175
Author(s):  
David E. Culler ◽  
Anurag Sah ◽  
Klaus E. Schauser ◽  
Thorsten von Eicken ◽  
John Wawrzynek
1991 ◽  
Vol 19 (2) ◽  
pp. 164-175 ◽  
Author(s):  
David E. Culler ◽  
Anurag Sah ◽  
Klaus E. Schauser ◽  
Thorsten von Eicken ◽  
John Wawrzynek

1991 ◽  
Vol 26 (4) ◽  
pp. 164-175 ◽  
Author(s):  
David E. Culler ◽  
Anurag Sah ◽  
Klaus E. Schauser ◽  
Thorsten von Eicken ◽  
John Wawrzynek

1995 ◽  
Vol 23 (4) ◽  
pp. 29-35
Author(s):  
Leonidas I. Kontothanassis ◽  
Michael L. Scott

2013 ◽  
Vol 57 (5) ◽  
pp. 675-692
Author(s):  
R. Gonzalez-Alberquilla ◽  
F. E. Frati ◽  
L. Pinuel ◽  
K. Strauss ◽  
L. Ceze

Author(s):  
R. Sinclair ◽  
B.E. Jacobson

INTRODUCTIONThe prospect of performing chemical analysis of thin specimens at any desired level of resolution is particularly appealing to the materials scientist. Commercial TEM-based systems are now available which virtually provide this capability. The purpose of this contribution is to illustrate its application to problems which would have been intractable until recently, pointing out some current limitations.X-RAY ANALYSISIn an attempt to fabricate superconducting materials with high critical currents and temperature, thin Nb3Sn films have been prepared by electron beam vapor deposition [1]. Fine-grain size material is desirable which may be achieved by codeposition with small amounts of Al2O3 . Figure 1 shows the STEM microstructure, with large (∽ 200 Å dia) voids present at the grain boundaries. Higher quality TEM micrographs (e.g. fig. 2) reveal the presence of small voids within the grains which are absent in pure Nb3Sn prepared under identical conditions. The X-ray spectrum from large (∽ lμ dia) or small (∽100 Ǻ dia) areas within the grains indicates only small amounts of A1 (fig.3).


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