Growth of AIN on (0001) α-Al2O3 using a novel ultrahigh vacuum transmission electron microscope with in-situ MBE

2022 ◽  
pp. 41-44
Author(s):  
M. Yeadon ◽  
M.T. Marshall ◽  
J.M. Gibson
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ultrahigh Vacuum ◽  
Transmission Electron ◽  
Α Al2o3

In Situ Ultrahigh Vacuum Transmission Electron Microscope Investigations of Dynamical Changes of Nanostructures on Silicon

2006 ◽  
Vol 46 ◽  
pp. 111-119 ◽  
Author(s):  
Lih Juann Chen ◽  
Wen Wei Wu ◽  
C.H. Liu
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ultrahigh Vacuum ◽  
In Situ Tem ◽  
Dynamic Changes ◽  
Directed Movement ◽  
Precise Knowledge ◽  
Transmission Electron ◽  
Unique Capability

In situ ultrahigh vacuum transmission electron microscope (TEM) is a powerful tool to investigate the dynamic changes of nanostructures on silicon. By observing growth and phase transitions in situ, understanding of their mechanisms can be used to model relevant processes. With the precise knowledge of the changes occurred on an atomic level, accurate control of the growth process can be achieved. The dynamical changes occurred on the nano scale are often unexpected, which also underscores the importance of the approach. In this presentation, we highlight two examples to demonstrate the unique capability of in situ TEM to study the dynamical changes. The examples include collective movement of Au nanoparticles and directed movement of Au-Si droplets on Si bi-crystal.

An ultrahigh vacuum and ultrahigh resolution transmission electron microscope

1984 ◽  
Vol 42 ◽  
pp. 436-437
Author(s):  
M.L. McDonald ◽  
J.M. Gibson
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ultrahigh Vacuum ◽  
Pole Piece ◽  
Ultrahigh Resolution ◽  
Specimen Holder ◽  
Transmission Electron ◽  
Sample Chamber ◽  
Point To Point

Interest in ultrahigh vacuum (UHV) specimen environments in the transmission electron microscope (TEM) has grown considerably in recent years. The possibility of in-situ studies of atomically clean surfaces has been demonstrated by Yagi et.al., Wilson & Petroff & others. Most designs have involved a side entry specimen holder with cryopumping in the pole piece and are not easily compatible with ultrahigh resolution(UHR) due to size and stability requirements. We have designed a differentially pumped UHV specimen chamber for the JEOL 200CX (UHRTEM). It is intended to allow examination of clean thin specimens at pressures below 10-9 torr with a point to point resolution of 2.5 Å. Provisions for in-situ heating, cooling & deposition have been made. A unique part of this design is the relatively large volume sample chamber held at UHV (figsl&2). This design allows characterization of the atmosphere to which the sample is exposed & cleaning & preparation of samples out of the pole piece which is believed to be necessary for UHRTEM. Another possibility with this design is the transfer of a sample into the TEM from other chambers by use of a transfer case without exposing the sample to an atmosphere above 10-9 torr. Extra ports have been provided to accommodate future experiments.

scholarly journals In Situ Ultrahigh Vacuum Transmission Electron Microscope Investigations of Nanostructures

2009 ◽  
Vol 15 (S2) ◽  
pp. 1220-1221
Author(s):  
LJ Chen ◽  
W-W Wu
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ultrahigh Vacuum ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

In-Situ Studies of the MBE Growth of CoSi2 on Si (111) in a UHV Transmission Electron Microscope

1987 ◽  
Vol 94 ◽  
Author(s):  
J. M. Gibson ◽  
J. L. Batstone ◽  
R. T. Tung
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ultrahigh Vacuum ◽  
Mbe Growth ◽  
In Situ Studies ◽  
Transmission Electron ◽  
Layer Mode ◽  
In Situ Observations

ABSTRACTIn-situ observations of the growth of CoSi2 films by Co deposition in an ultrahigh vacuum transmission electron microscope are described. Results include the observation of intermediate epitaxial phases (both hexagonally distorted Co2Si and CoSi) and the observation that pinholes nucleate in CoSi2 films after growth in a metastable layer mode.

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