Complementary metal-oxide-semiconductor (CMOS) image sensors for use in space

2014 ◽  
pp. 250-280 ◽  
Author(s):  
J. Bogaerts
2010 ◽  
Vol 159 ◽  
pp. 527-531
Author(s):  
Bao Yuan Han ◽  
Yuan Yuan Shang ◽  
Xiao Xu Zhao ◽  
Hui Liu

CMOS (Complementary Metal Oxide Semiconductor) imagers as a solid state array develop rapidly. This article introduces various types of CMOS image sensors’ noises in detail, the cause of each noise, as well as a brief overview of current methods for reducing different noise.


2016 ◽  
Vol 11 (3) ◽  
pp. 193
Author(s):  
Eui June Jeong ◽  
Shahrokh Motallebi ◽  
Jae-Hyun Kim ◽  
Changmin Lee ◽  
Kilsung Lee ◽  
...  

The trend in the development and manufacturing of Complementary Metal Oxide Semiconductor (CMOS) image sensors is to miniaturize pixels on the chips and hence to improve their imaging characteristics by providing a higher image resolution. As CMOS technology scales down into submicron regions, the conventional color filters are no longer suitable for generating the desired optical density. The major drawback of the conventional color filters produced from pigment-based positive tone photosensitive compositions, is the heterogeneous dispersion of pigments in photoresist composition resulting in color irregularities due to coarse particles of the pigments. One of the most perspective ways to solve this problem is a replacing the pigment with a dye as a coloring agent and thus, increasing solubility of the latter to obtain a homogeneous colored photoresist composition. In this paper, several novel red dye-containing materials are synthesized and tested to provide a redcolored photosensitive composition. This red-colored photosensitive composition is very promising for application as color filters for CMOS image sensors with high resolution and high level of integration architecture.


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