Theoretical Analysis of the Efficiency of Silicon Solar Cells with Amorphized Layers in the Space Charge Region

2015 ◽  
Vol 60 (7) ◽  
pp. 620-626 ◽  
Author(s):  
A.V. Kozynetz ◽  
◽  
V.A. Skryshevskyi
Keyword(s):  
Solar Cells ◽  
Theoretical Analysis ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Solar Cells

scholarly journals New measurement method for the investigation of space charge region recombination losses induced by the metallization of silicon solar cells

2011 ◽  
Vol 8 ◽  
pp. 694-699 ◽  
Author(s):  
R. Hoenig ◽  
M. Glatthaar ◽  
F. Clement ◽  
J. Greulich ◽  
J. Wilde ◽  
...  
Keyword(s):  
Solar Cells ◽  
Space Charge ◽  
Space Charge Region ◽  
Measurement Method ◽  
Silicon Solar Cells

scholarly journals Features in the Formation of a Recombination Current in the Space Charge Region of Silicon Solar Cells

2016 ◽  
Vol 61 (10) ◽  
pp. 917-922 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylyov ◽  
V.M. Vlasiuk ◽  
R.M. Korkishko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Solar Cells ◽  
Recombination Current

Enhanced absorption in the space charge region of GaAs solar cells

2021 ◽  
Author(s):  
Yangfeng Li ◽  
Wenqi Wang ◽  
Chen Yue ◽  
Xiaotao Hu ◽  
Yimeng Song ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Absorption Coefficient ◽  
Space Charge ◽  
Space Charge Region ◽  
Solar Spectrum ◽  
Enhanced Absorption

Abstract The photo-generated currents of GaAs solar cells with different lengths of space charge region are obtained and analyzed in this study. The enhanced absorption coefficient in the space charge region is adopted to calculate the photo-generated current based on the solar cell physics theory. The calculated currents coincide well with the experimental currents both under single wavelength incidence and solar spectrum irradiation conditions.

A Study of the Diffusion and pn-Junction Formation in CIGS Solar Cells using EBIC and EDX Measurements

2005 ◽  
Vol 865 ◽  
Author(s):  
Shogo Ishizuka ◽  
Keiichiro Sakurai ◽  
Koji Matsubara ◽  
Akimasa Yamada ◽  
Minoru Yonemura ◽  
...  
Keyword(s):  
Solar Cells ◽  
Space Charge ◽  
Space Charge Region ◽  
Pn Junction ◽  
Junction Formation ◽  
Cigs Solar Cells ◽  
Constituent Elements

AbstractUsing EBIC and EDX measurements, CIGS solar cells prepared under several different conditions were observed and characterized. The results of EBIC and EDX measurements suggest that Cd plays an important role in the forming of a buried pn-junction in the CIGS layer via diffusion, and de-emphasize the possibility of the formation of the hetero pn-junction at the CdS/CIGS heterointerface. The correlation of the extent of the space charge region and the observed shift in the pn-junction location with the diffusion of the constituent elements in CIGS was investigated.

Theoretical analysis of amorphous silicon solar cells: Effects of interface recombination

1984 ◽  
Vol 55 (4) ◽  
pp. 1155-1161 ◽  
Author(s):  
Porponth Sichanugrist ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Solar Cells ◽  
Theoretical Analysis ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Interface Recombination
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