Monte Carlo Simulations of Defect Relaxation in Amorphous Silicon
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ABSTRACTThe structural memory model of slow defect relaxation in a-Si:H is extended to the limit of long defect filling times. The model was proposed in order to explain unusual, defect filling-time dependent capacitance transients that were observed for short defect filling times. For long defect filling pulses however, the experiments show normal charge emission transients that saturate into filling-time independent transients. We present two possibilities for explaining the approach to saturation within the structural memory model. Results of Monte Carlo simulations of the models are discussed.
1996 ◽
Vol 198-200
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pp. 535-539
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2005 ◽
Vol 63
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pp. S546-S547
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2012 ◽
Vol 57
(11)
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pp. 3295-3308
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2005 ◽
Vol 59
(1)
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pp. 115-126
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1996 ◽
Vol 104
(15)
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pp. 5997-6008
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