Advances in time-dependent Monte Carlo simulations for void velocity determination using neutron noise techniques

2021 ◽  
pp. 103840
Author(s):  
Toshihiro Yamamoto ◽  
Xiuzhong Shen ◽  
Hiroki Sakamoto
1995 ◽  
Vol 377 ◽  
Author(s):  
Thomas Unold ◽  
Howard M. Branz

ABSTRACTThe structural memory model of slow defect relaxation in a-Si:H is extended to the limit of long defect filling times. The model was proposed in order to explain unusual, defect filling-time dependent capacitance transients that were observed for short defect filling times. For long defect filling pulses however, the experiments show normal charge emission transients that saturate into filling-time independent transients. We present two possibilities for explaining the approach to saturation within the structural memory model. Results of Monte Carlo simulations of the models are discussed.


2012 ◽  
Vol 57 (11) ◽  
pp. 3295-3308 ◽  
Author(s):  
J Shin ◽  
J Perl ◽  
J Schümann ◽  
H Paganetti ◽  
B A Faddegon

1996 ◽  
Vol 104 (15) ◽  
pp. 5997-6008 ◽  
Author(s):  
E. J. Dawnkaski ◽  
D. Srivastava ◽  
B. J. Garrison

Sign in / Sign up

Export Citation Format

Share Document