scholarly journals Characteristics of non-crystalline thin oxide films formed on aluminum by plasma electrolytic oxidation

Materials ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2286 ◽  
Author(s):  
Kai Yang ◽  
Haisong Huang ◽  
Jiadui Chen ◽  
Biao Cao

Micro-arc discharge events and dielectric breakdown of oxide films play an important role in the formation process of plasma electrolytic oxidation coating. Single pulse anodization of micro-electrodes was employed to study the discharge behavior and dielectric breakdown of oxide films deposited on aluminum in an alkaline silicate electrolyte. Voltage and current waveforms of applied pulses were measured and surface morphology of micro-electrodes was characterized from images obtained using scanning electron microscope (SEM). A feasible identification method for the critical breakdown voltage of oxide film was introduced. Different current transients of voltage pulses were obtained, depending on applied pulse voltage and duration. In addition, the active capacitive effect and complex non-linear nature of plasma electrolytic oxidation process is confirmed using dynamic electrical characteristic curves. A good correlation between the pulse parameters and shape of discharge channels was observed. Circular opened pores were found to close with increasing potential and pulse width. Finally, the characteristic parameters of a single discharge event were estimated.


2013 ◽  
Vol 63 (11) ◽  
pp. 1296-1300
Author(s):  
K. S. MIN ◽  
J. T. KIM ◽  
S. S. LEE ◽  
D. CHA ◽  
S. H. YOON ◽  
...  

Surfaces ◽  
2020 ◽  
Vol 3 (2) ◽  
pp. 168-181 ◽  
Author(s):  
Hamed Arab ◽  
Gian Luca Chiarello ◽  
Elena Selli ◽  
Giacomo Bomboi ◽  
Alberto Calloni ◽  
...  

Porous crystalline Ni-doped TiO2 films were produced using DC plasma electrolytic oxidation in refrigerated H2SO4 aqueous solutions containing NiSO4. The crystalline phase structure consisted of a mixture of anatase and rutile, ranging from ~30 to ~80 wt % rutile. The oxide films obtained at low NiSO4 concentration showed the highest photocurrent values under monochromatic irradiation in the UV-vis range, outperforming pure TiO2. By increasing NiSO4 concentration above a threshold value, the photoelectrochemical activity of the films decreased below that of undoped TiO2. Similar results were obtained using cyclic voltammetry upon polychromatic UV-vis irradiation. Glow discharge optical emission spectrometry (GD-OES) analysis evidenced a sulfur signal peaking at the TiO2/Ti interface. XPS spectra revealed that oxidized Ni2+, S4+ and S6+ ions were included in the oxide films. In agreement with photocurrent measurements, photoluminescence (PL) spectra confirmed that less intense PL emission, i.e., a lower electron-hole recombination rate, was observed for Ni-doped samples, though overdoping was detrimental.


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