CREATING MOSFET NONLINEAR CAPACITANCE MODEL

The problems of model creating for nonlinear gate-drain capacitance of MOSFET are considered. A circuit is proposed for measuring this capacitance in the region of negative drain-gate voltages. The dependence of the gate-drain capacitance on voltage for the IRF540N transistor is constructed and an approximating function that can be used to create a model of a MOS-transistor is proposed.