Vector Analysis of Electrical Networks for Temperature Measurement of MOS Power Transistors

The article presents the concept of using VNA (Vector Network Analyzer) to measure the temperature of the MOS transistor junction. The method assumes that the scattering parameters of the network consisting of the transistor depend on the temperature. The tests confirmed the influence of temperature on the S11 parameter and the input network capacity during ambient temperature changes in the range of 35–70 °C. Measurements were made for the gate-source (G-S) input of the system. The measurements were carried-out with the transistor in the ON/OFF states. In order to validate the measurements, the temperature of the tested element was recorded with the MWIR Cedip-Titanium thermal imaging camera.

Optimized Technologies for Cointegration of MOS Transistor and Glucose Oxidase Enzyme on a Si-Wafer

The biosensors that work with field effect transistors as transducers and enzymes as bio-receptors are called ENFET devices. In the actual paper, a traditional MOS-FET transistor is cointegrated with a glucose oxidase enzyme, offering a glucose biosensor. The manufacturing process of the proposed ENFET is optimized in the second iteration. Above the MOS gate oxide, the enzymatic bioreceptor as the glucose oxidase is entrapped onto the nano-structured TiO2 compound. This paper proposes multiple details for cointegration between MOS devices with enzymatic biosensors. The Ti conversion into a nanostructured layer occurs by anodization. Two cross-linkers are experimentally studied for a better enzyme immobilization. The final part of the paper combines experimental data with analytical models and extracts the calibration curve of this ENFET transistor, prescribing at the same time a design methodology.

Magnetic sensitivity modeling of dual gate MOS transistor

In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. The magnetic field modulates the electrons position and density as well as the potential distribution in the case of silicon tunnel tunneling field-effects (FETs). This modulation impacts the device electrical characteristics such as ON current (I_ON), subthreshold leakage current (IOF), threshold voltage (V_T), magneto-transconductance (g_mm) and output magneto-conductance (gm_DS). In addition, a hall voltage (V_H) is induced and modulated by the magnetic field. It has been observed that this voltage influences the effective applied gate voltage. It has been observed that the threshold voltage variations induced by the magnetic field is of paramount importance and affects the device switching properties both speed and power dissipation, noted that the threshold voltage VT and (Ion/Iof) ratio are reduced by 10^-3V and 10² for a magnetic field of ±6 and ±5.5 Tesla, respectively. We have simulated the different behavior in the channel, mainly doping concentration, potential distribution, conduction and valence bands, total current density, total charge density, electric field, electron mobility, and electron velocity.

A BIST Scheme for Bootstrapped Switches

This paper proposes a built-in self-test (BIST) scheme for detecting catastrophic faults in bootstrapped switches. The clock signal and the gate voltage of the sampling MOS transistor are taken as the observation signals in the proposed BIST scheme. Usually, the gate voltage of the sampling MOS transistor is greater than or equal to the supply voltage when the switch is turn on, and such a voltage is not suitable for observation. To solve this problem, a low power supply voltage is provided for the bootstrapped switch to obtain a suitable observation voltage. The proposed BIST scheme and the circuit under test (CUT) are realized with transistor level. The proposed BIST scheme was simulated by HSPICE. The simulated fault coverage is approximately 87.9% with 66 test circuits.

Modeling and analysis of wavering redistribution of energy in the presence of its own electromagnetic radiation in key electronic circuits on MOS transistors.

For the first time, a simplified model of the redistribution of vibrational energy in a MOS transistor has been developed and analyzed. The transistor is turned on in open drain mode and in inverter mode. After calculating the parameters, the numerical radio profiles of the signals of the electrical component of electromagnetic radiation, created by the key unit itself, were obtained. An experiment was carried out to register the vibrational redistribution of energy in a MOS transistor using a specially designed sample. The results of registration of a series of radio profiles of signals with the configuration of the universal ports of the sample of a digital device are presented, and a correlation assessment of the reproducibility of the experiment is carried out. The correlation of the radio profiles of the signals obtained as a result of modeling and as a result of the experiment is not lower than 0.93. This testifies to the correctness of the developed models. On the basis of the presented development, a correlation assessment of the radiation of a reference sample and a sample with a slight deviation of parameters has been carried out. Even with a slight change in the parameters of the key node associated with degradation of the gate dielectric, the cross-correlation in the normal state and with a defect r < 0.7, which indicates a significant difference in the signal radio profile of normal functioning and with deterioration of parameters. The proposed models can be used in passive radio-wave technical diagnostics based on the registration of the electrical component of electromagnetic radiation generated by the radio-electronic devices themselves and opens up new possibilities for diagnosing malfunctions at the early stages of their occurrence.