scholarly journals An analytical method for estimation of parameters of Self Mixing Interferometric phase equation over all feedback regimes

Author(s):  
Junaid Khan

This paper presents a novel algorithm for measuring the linewidth enhancement factor of semiconductor lasers and the optical feedback level factor in a semiconductor laser with an external cavity. The proposed approach is based on analysis of the self-mixing phase equation to deduce equations for finding parameters given only knowledge of the perturbed phase. The effectiveness of the method has been validated with accuracy of 8.6%and 1.7% for 'C' and alpha respectively while covering all feedback regimes.

2020 ◽  
Author(s):  
Junaid Khan

This paper presents a novel algorithm for measuring the linewidth enhancement factor of semiconductor lasers and the optical feedback level factor in a semiconductor laser with an external cavity. The proposed approach is based on analysis of the self-mixing phase equation to deduce equations for finding parameters given only knowledge of the perturbed phase. The effectiveness of the method has been validated with accuracy of 8.6%and 1.7% for 'C' and alpha respectively while covering all feedback regimes.


2012 ◽  
Vol 22 (10) ◽  
pp. 1250246 ◽  
Author(s):  
CHRISTIAN OTTO ◽  
BJÖRN GLOBISCH ◽  
KATHY LÜDGE ◽  
ECKEHARD SCHÖLL ◽  
THOMAS ERNEUX

We study a five-variable electron-hole model for a quantum-dot (QD) laser subject to optical feedback. The model includes microscopically computed Coulomb scattering rates. We consider the case of a low linewidth enhancement factor and a short external cavity. We determine the bifurcation diagram of the first three external cavity modes and analyze their bifurcations. The first Hopf bifurcation marks the critical feedback rate below which the laser is stable. We derive an analytical approximation for this critical feedback rate that is proportional to the damping rate of the relaxation oscillations (ROs) and inversely proportional to the linewidth enhancement factor. The damping rate is described in terms of the carrier lifetimes. They depend on the specific band structure of the QD device and they are computed numerically.


2014 ◽  
Vol 22 (5) ◽  
pp. 5651 ◽  
Author(s):  
Chao-Fu Chuang ◽  
Yi-Huan Liao ◽  
Chih-Hao Lin ◽  
Siao-Yu Chen ◽  
Frédéric Grillot ◽  
...  

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