Target oriented migration by means of controlled illumination

1992 ◽  
Author(s):  
W. E. A. Rietveld ◽  
A. J. Berkhout ◽  
C. P. A. Wapenaar
Keyword(s):  
Controlled Illumination

scholarly journals Shaping plasmon beams via the controlled illumination of finite-size plasmonic crystals

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
J.-S. Bouillard ◽  
P. Segovia ◽  
W. Dickson ◽  
G. A. Wurtz ◽  
A. V. Zayats
Keyword(s):  
Finite Size ◽  
Plasmonic Crystals ◽  
Controlled Illumination

Real-Time Visual Servoing Using Controlled Illumination

1994 ◽  
Vol 13 (1) ◽  
pp. 93-100 ◽  
Author(s):  
J.P. Urban ◽  
G. Motyl ◽  
J. Gallice
Keyword(s):  
Real Time ◽  
Visual Servoing ◽  
Controlled Illumination

Phase-shift anisotropic depth migration using controlled illumination: Stability in relation to addition of random noise

2005 ◽  
Author(s):  
Marco Antonio Cetale Santos ◽  
Djalma Manoel Soares Filho ◽  
Paulo Léo Manassi Osório and Felipe Prado Loureiro
Keyword(s):  
Phase Shift ◽  
Random Noise ◽  
Depth Migration ◽  
Controlled Illumination

Shaping photonic hook via well-controlled illumination of finite-size graded-index micro-ellipsoid

2020 ◽  
Vol 22 (8) ◽  
pp. 085002 ◽  
Author(s):  
Cheng-Yang Liu ◽  
Hung-Ju Chung ◽  
Oleg V Minin ◽  
Igor V Minin
Keyword(s):  
Finite Size ◽  
Graded Index ◽  
Controlled Illumination

Impurity-Induced Defect States in Pb1−xGexTe Alloys Doped With Gallium

1999 ◽  
Vol 607 ◽  
Author(s):  
E.P. Skipetrov ◽  
E.A. Zvereva ◽  
V.V. Belousov ◽  
L.A. Skipetrova
Keyword(s):  
Low Temperature ◽  
Heat Source ◽  
Single Crystals ◽  
Deep Level ◽  
Persistent Photoconductivity ◽  
Background Illumination ◽  
Defect States ◽  
Galvanomagnetic Properties ◽  
Controlled Illumination ◽  
Temperature Activation

AbstractGalvanomagnetic properties of n-Pb1−xGexTe<Ga>(O.04≤x≤O.08) single crystals have been investigated in the shielded from external background illumination chamber and under controlled illumination from infrared heat source. Low temperature activation range of the impurity conductivity on the dark curves of ρ(l/T) was revealed and attributed to the appearance of gallium-induced deep level EGa in the gap of the alloys. It was shown that the alloys possess high infrared photosensitivity at temperatures below Tc=50%60 K, and effect of the persistent photoconductivity at helium temperatures was revealed.

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