Abstract
Enhanced hole injection is essential to achieve high performance in perovskite light-emitting diodes (LEDs). Here, a strategy is introduced to enhance hole injection by an electric dipole layer. Hopping theory demonstrates electric dipoles between hole injection layer and hole transport layer can enhance hole injection significantly. MoO3 is then chosen as the electric dipole layer between PEDOT:PSS (hole injection layer) and PVK (hole transport layer) to generate electric dipoles due to its deep conduction band level. Theoretical results demonstrate that strong electric fields are produced for efficient hole injection, and recombination rate is substantially increased. Capacitance-voltage analyses further prove efficient hole injection by introducing the electric dipole layer. Based on the proposed electric dipole layer structure, perovskite LEDs achieve a high current efficiency of 72.7 cd A−1, indicating that electric dipole layers are a feasible approach to enhance perovskite LEDs performance.
Electrostatic field of the semi-infinite electric dipole layer as (a) dual analogy to the Ampere's law (b) capacitor's fringing field
