Effect of PEDOT:PSS on the performance of solution-processed blue phosphorescent organic light-emitting diodes with an exciplex host

The acidity of the PEDOT:PSS hole injection layer was found to effect the performance of efficient solution-processed organic light-emitting diodes incorporating a light-emitting layer composed of a blue phosphorescent dendrimer:exciplex host blend.

Investigation of Efficient Hole Injection Layer for Enhancement of Opto-Electrical Properties of an Organic Light Emitting Diode

A multilayer Organic Light Emitting Diode (OLED) has been simulated and analysed for the investigation of an efficient Hole Injection Layer (HIL). Study includes the simulation of different devices which comprises of the different materials as HIL. Three devices have been simulated and their characteristics have been extracted to compare the electrical and optical properties of the OLEDs. It has been found that the device with HAT-CN as HIL has achieved the highest value of the current at the mentioned applied voltage and hence the current density. There is drastic enhancement in the current density of the device when an HIL is inserted in comparison to when it is not used in the OLED. Also, there is an approximate enhancement of around 20% in the device performance when HIL is changed from MoO3 to HAT-CN. The device without any HIL included has the highest electric field at the given voltage. Optical characteristics of the device includes Electroluminescence Intensity with respect to the varying wavelength and it has been observed that OLED achieved the maximum light intensity at an approximate wavelength of around 320 nm.

Enhanced Hole Injection Characteristics of a Top Emission Organic Light-Emitting Diode with Pure Aluminum Anode

A top emitting organic light-emitting diode (OLED) device with pure aluminum (Al) anode for high-resolution microdisplays was proposed and fabricated. The low work function of the Al anode, even with a native oxide formed on the Al anode surface, increases the energy barrier of the interface between the anode and hole injection layer, and has poor hole-injection properties, which causes the low efficiency of the device. To enhance the hole-injection characteristics of the Al anode, we applied hexaazatriphenylene hexacarbonitrile (HATCN) as the hole-injection layer material. The proposed OLED device with a pure Al anode and native oxide on the anode surface improved efficiency by up to 35 cd/A at 1000 nit, which is 78% of the level of normal OLEDs with indium tin oxide (ITO) anode.

Solution-Processed NiO as a Hole Injection Layer for Stable Quantum Dot Light-Emitting Diodes

In this work, we fabricated quantum dot light-emitting diodes using solution-processed NiO as the hole injection layer to replace the commonly used poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS) layer. We successfully prepared NiO films by spin coating the NiO precursor, then annealing them, and then treating them with UV-ozone under optimized conditions. The best device with the NiO film shows higher current efficiency (25.1 cd/A) than that with the PEDOT:PSS layer (22.3 cd/A). Moreover, the long-term stability of the devices with NiO which is annealed at 500 °C is improved substantially. These results suggest that the NiO layer can be a good alternative for developing stable devices.