Light-induced defect creation processes and light-induced defects in hydrogenated amorphous silicon

We have proposed a model of light-induced defect creation processes and light-induced defects. Recently, important results using pulsed electron-nuclear double resonance (ENDOR) by Fehr et al. [M. Fehr, A. Schnegg, C. Teutloff, R. Bittl, O. Astakhov, F. Finger, B. Rech, K. Lips, Phys. Status Solidi A 207, 552 (2010)] have been reported, so that these results are interpreted on the basis of our model. Fehr et al. have observed ENDOR signals due to hydrogen nuclei distributed around a dangling bond. The ENDOR spectra due to hydrogen nuclei being located with distance of r from the dangling bond have been calculated, taking into accounts the dipolar interaction, and also the Fermi-type contact hyperfine interaction for the H-related dangling bond (HDB) that is a dangling bond having hydrogen at a nearby site. The typical features of the observed ENDOR spectra are that the spectrum has a shoulder at the low frequency side from the natural NMR frequency of hydrogen and it has a dip in the central part. The calculated ENDOR spectrum of HDB exhibits such a shoulder. This is consistent with our model of light-induced defects such as HDB. The ENDOR spectra with various values of r are calculated. In this paper, we also deal with the distant ENDOR precisely, using the theory of distant ENDOR by Lambe et al. [J. Lambe, N. Laurance, K.C. McIrvine, R.W. Terhune, Phys. Rev. 122, 1161 (1961)]. The calculated distant ENDOR spectrum shows a dip in the central part. Concerning the dip, Fehr et al. attribute the dip to be due to the suppression of the matrix ENDOR line (this is called the artifact). Thus, it is not obvious whether the dip is due to such an artifact or the central part of the distant ENDOR spectrum.